Rao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Liou, JJ.
(1999)
Modeling of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices.
In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract
A theoretical model is developed for LT-GaAs and LT-Al0.3Ga0.7As MISFETs and is compared with experimental data. This model is based upon the analytical solution of Poisson's equation, the current continuity equation and the Chang-Fetterman velocity-field equation. When the device is operating in the linear region and knee region the one-dimensional Poisson equation has been considered. When the device is in the saturation regime, the two-dimensional Poisson equation has been solved analytically. The resulting output current-voltage characteristics are in excellent agreement with experimental data.
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