Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz

Ardouin, M. ; Bonte, B. ; Zaknoune, M. ; Théron, D. ; Cordier, Y. ; Bollaert, S. ; De Jaeger, J.C. (2002) Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

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Abstract

This paper presents the influence of the recess extension on the power performance of double heterostructure Al0.65In0.35As/In0.35Ga0.65As/GaAs metamorphic HEMT’s in the millimeter wave range. Depending on the recess extension, devices exhibit an extrinsic cut-off frequency varying from 80 to 120 GHz. Output power measured at 60GHz with passive load pull bench can reach a power density of 340mW/mm with 6.5 dB linear gain and 21%PAE.

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