Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz

Ardouin, M. ; Bonte, B. ; Zaknoune, M. ; Théron, D. ; Cordier, Y. ; Bollaert, S. ; De Jaeger, J.C. (2002) Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

This paper presents the influence of the recess extension on the power performance of double heterostructure Al0.65In0.35As/In0.35Ga0.65As/GaAs metamorphic HEMT’s in the millimeter wave range. Depending on the recess extension, devices exhibit an extrinsic cut-off frequency varying from 80 to 120 GHz. Output power measured at 60GHz with passive load pull bench can reach a power density of 340mW/mm with 6.5 dB linear gain and 21%PAE.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Ardouin, M.
Bonte, B.
Zaknoune, M.
Théron, D.
Cordier, Y.
Bollaert, S.
De Jaeger, J.C.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:37
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