Nonlinear characterization of microwave transistors by the means of pulsed I(V) and pulsed S-Parameters measurements

Teyssier, J.P. ; Barataud, D. ; Laloue, A. ; Bouysse, Ph. ; Quere, R (1999) Nonlinear characterization of microwave transistors by the means of pulsed I(V) and pulsed S-Parameters measurements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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Abstract

A versatile pulsed I(V) and 40 GHz pulsed S parameters measurement system of microwave transistors is described Capability of discrimination between thermal and trapping effects with a pulse set-up is demonstrated A method to measure electrically the thermal resistance and capacitance of transistors with a pulse set-up is proposed Finally, it is explained how to derive transistor nonlinear characteristics from these measurements for modeling purposes.

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