Long, John R.
(2005)
Can silicon catch the millimeter wave?
In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract
Transceiver designs implemented in silicon
technology are most competitive in design cycle-time and
performance versus cost when compared to other technologies.
Scaling is driving silicon technology towards gain-bandwidths
of 300GHz, enabling circuits operating deep into
mm-wave frequency bands (i.e., well above 30 GHz). However,
innovations in on-chip passive design and construction
currently being pioneered in mixed-signal silicon technologies
may be the real technology enablers at these frequencies.
Relevant examples are presented from the author’s own
work and the recent literature.
Abstract
Transceiver designs implemented in silicon
technology are most competitive in design cycle-time and
performance versus cost when compared to other technologies.
Scaling is driving silicon technology towards gain-bandwidths
of 300GHz, enabling circuits operating deep into
mm-wave frequency bands (i.e., well above 30 GHz). However,
innovations in on-chip passive design and construction
currently being pioneered in mixed-signal silicon technologies
may be the real technology enablers at these frequencies.
Relevant examples are presented from the author’s own
work and the recent literature.
Tipologia del documento
Documento relativo ad un convegno o altro evento
(Atto)
Autori
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:30
URI
Altri metadati
Tipologia del documento
Documento relativo ad un convegno o altro evento
(Atto)
Autori
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:30
URI
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