Dynamics of electric field screening in photoconductive THz sources with spatially patterned excitation

Dambrine, G. ; Gloria, D. ; Scheer, P. ; Raynaud, C. ; Danneville, F. ; Lepilliet, S. ; Siligaris, A. ; Pailloncy, G. ; Martineau, B. ; Bouhana, E. ; Valentin, R. (2005) Dynamics of electric field screening in photoconductive THz sources with spatially patterned excitation. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

65nm n-MOSFETs show state-of-the-art cutoff frequency with ft =210 GHz and microwave low noise and high gain properties(NFmin= 0.8dB and Gass=17.3 dB at 12 GHz). As compared with the previous nodes, the high frequency properties of these MOSFETs continue to be in agreement with the downscaling trends.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Dambrine, G.
Gloria, D.
Scheer, P.
Raynaud, C.
Danneville, F.
Lepilliet, S.
Siligaris, A.
Pailloncy, G.
Martineau, B.
Bouhana, E.
Valentin, R.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:30
URI

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