Dambrine, G. ; Gloria, D. ; Scheer, P. ; Raynaud, C. ; Danneville, F. ; Lepilliet, S. ; Siligaris, A. ; Pailloncy, G. ; Martineau, B. ; Bouhana, E. ; Valentin, R.
(2005)
Dynamics of electric field screening in photoconductive THz sources with spatially patterned excitation.
In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract
65nm n-MOSFETs show state-of-the-art cutoff frequency with ft =210 GHz and microwave low noise and high gain properties(NFmin= 0.8dB and Gass=17.3 dB at 12 GHz). As compared with the previous nodes, the high frequency properties of these MOSFETs continue to be in agreement with the downscaling trends.
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