ESD characteristics of GaAs versus silicon diode

Park, Changkun ; Yun, Seok-Oh ; Han, Jeonghu ; Cheon, Sang-Hoon ; Park, Jae-Woo ; Hong, Songcheol (2005) ESD characteristics of GaAs versus silicon diode. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Abstract

The ESD characteristics of GaAs diode are compared with those of Silicon diode. The ESD diodes are designed and implemented using GaAs HBT technology and 0.25 um CMOS technology. The differences of ESD characteristics between GaAs diode and Silicon diode are investigated, simulated and measured. Because the thermal characteristics of GaAs are different from those of Silicon, the ESD characteristics of GaAs device are different from those of Silicon device.

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