ESD characteristics of GaAs versus silicon diode

Park, Changkun ; Yun, Seok-Oh ; Han, Jeonghu ; Cheon, Sang-Hoon ; Park, Jae-Woo ; Hong, Songcheol (2005) ESD characteristics of GaAs versus silicon diode. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

The ESD characteristics of GaAs diode are compared with those of Silicon diode. The ESD diodes are designed and implemented using GaAs HBT technology and 0.25 um CMOS technology. The differences of ESD characteristics between GaAs diode and Silicon diode are investigated, simulated and measured. Because the thermal characteristics of GaAs are different from those of Silicon, the ESD characteristics of GaAs device are different from those of Silicon device.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Park, Changkun
Yun, Seok-Oh
Han, Jeonghu
Cheon, Sang-Hoon
Park, Jae-Woo
Hong, Songcheol
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:30
URI

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