On-state safe operating area of GaAs MESFET defined for non linear applications

Ismail, N. ; Malbert, N. ; Labat, N. ; Touboul, A. ; Muraro, J-L. ; Brasseau, F. ; Langrez, D. (2005) On-state safe operating area of GaAs MESFET defined for non linear applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper provides a new approach to evaluate the transistor safe operating area at nominal operating conditions which has been demonstrated on MESFET technology. It consists on performing on-state and off-state accelerated DC step stresses for bias conditions which can be reached by the Vds and Vgs sweeps in overdrive conditions. Both on-state and off-state stresses shown different degradation modes which can be attributed to the different stress bias conditions. On the one hand, the on-state stress corresponds to the impact ionization regime where the drain-gate voltage is considered as an accelerating factor for the device degradation. On the other hand, the off-state stress is performed for bias conditions which correspond to the gate leakage current regime in the reverse Igs-Vgs characteristics where the drain-gate voltage and the gate current are considered as an accelerating factor for the device degradation.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Ismail, N.
Malbert, N.
Labat, N.
Touboul, A.
Muraro, J-L.
Brasseau, F.
Langrez, D.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:31
URI

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