Neural-Based Large-Signal Device Models Learning First-Order Derivative Parameters for Intermodulation Distortion Prediction

Giannini, F. ; Leuzzi, G. ; Orengo, G. ; Colantonio, P. (2002) Neural-Based Large-Signal Device Models Learning First-Order Derivative Parameters for Intermodulation Distortion Prediction. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

A detailed procedure to learn a nonlinear model together with its first-order derivative data is presented. Two correlated multilayer perceptron (MLP) neural networks providing the model and its first-order derivatives, respectively, are trained simultaneously. Applying this method to FET devices leads to nonlinear models for current and charge fitting derivative parameters. The training data is the bias-dependent equivalent circuit parameters extracted from S-parameter measurements. The resulting models are suitable for both small-signal and large-signal analyses, in particular for intermodulation distortion prediction. Examples for power amplifier simulations of power transfer, efficiency and intermodulation distortion performances are presented.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Giannini, F.
Leuzzi, G.
Orengo, G.
Colantonio, P.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:38
URI

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