Parameter extraction procedure for microwave and millimetre-wave monolithic FET-type devices based on a scalable distributed model

Castillo-Vázquez, B. ; Martin-Guerrero, T.M ; Camacho-Peñalosa, C. (1998) Parameter extraction procedure for microwave and millimetre-wave monolithic FET-type devices based on a scalable distributed model. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Salva citazione

Citato da

Full text disponibile come:

Anteprima

Documento PDF
Download (2MB) | Anteprima

Abstract

A new parameter extraction procedure that uses a FET distributed model in conjunction with a standard optimization routine is presented. The model extraction is carried out by simultaneously fitting the S-parameters of various devices with different gate widths. This procedure has shown to be very robust and yields a very reliable identification of the model elements, both parasitic and intrinsic.

Abstract

Tipologia del documento

Documento relativo ad un convegno o altro evento (Atto)

Autori