Castillo-Vázquez, B. ; Martin-Guerrero, T.M ; Camacho-Peñalosa, C.
(1998)
Parameter extraction procedure for microwave and millimetre-wave monolithic FET-type devices based on a scalable distributed model.
In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract
A new parameter extraction procedure that uses a FET distributed model in conjunction with a standard optimization routine is presented. The model extraction is carried out by simultaneously fitting the S-parameters of various devices with different gate widths. This procedure has shown to be very robust and yields a very reliable identification of the model elements, both parasitic and intrinsic.
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