Electromagnetic model of GaAs VCSEL'S with gain giuding

Bava, G.P. ; Debernardi, P. ; Fratta, L. (1998) Electromagnetic model of GaAs VCSEL'S with gain giuding. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract

An electromagnetic model of Vertical Cavity Surface Emitting Lasers (VCSEL) based on semiconductor compounds is developed; it relies on the rigorous solution of Maxwell equations, including the field confinement due to the gain guiding mechanism which strongly influences the noise properties. The solution of the problem is based on an integral equation of the Fredholm type whose eigenvalues are related to the threshold condition and eigenvectors give the field distributions.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Bava, G.P.
Debernardi, P.
Fratta, L.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:34
URI

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