Abstract

A new FET extrinsic parameter extraction method is proposed, in which all the extrinsic elements can be determined directly from the S-parameters at pinch-off bias. It utilizes the measurement data of various gate-width FET's and the simple scaling property of each equivalent circuit parameters, eliminating some complex measurement steps such as forward gate bias measurement. Since the gate-width scaling characteristics are taken into account, the proposed method can be utilized for the MMIC design where the optimization of the FET gate-width is important. The proposed method was successfully applied to the modeling of 0.25 um GaAs P-HEMT.