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Hourany, Jean ; Bellaiche, Joseph ; Andre, Jean-Pierre ; Delhaye, E.
(1998)
40 Gb/s ICs using a production PHEMT technology.
In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract
This contribution presents a new set of digital ICs dedicated to optical fibre links, realised using a qualified GaAs P-HEMT technology with 0.25 um gate length. The ICs include 2:1 selectors, 1:2 DEMUXes, D-flip-flops, dividers by 2, operating at bit-rates up to 40 Gb/s. Applications include high speed optical fibre systems. These circuits may also be considered as basic building blocks for future higher complexity digital functions.
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