40 Gb/s ICs using a production PHEMT technology

Hourany, Jean ; Bellaiche, Joseph ; Andre, Jean-Pierre ; Delhaye, E. (1998) 40 Gb/s ICs using a production PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract

This contribution presents a new set of digital ICs dedicated to optical fibre links, realised using a qualified GaAs P-HEMT technology with 0.25 um gate length. The ICs include 2:1 selectors, 1:2 DEMUXes, D-flip-flops, dividers by 2, operating at bit-rates up to 40 Gb/s. Applications include high speed optical fibre systems. These circuits may also be considered as basic building blocks for future higher complexity digital functions.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Hourany, Jean
Bellaiche, Joseph
Andre, Jean-Pierre
Delhaye, E.
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DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:35
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