Analysis of extrinsic element influence on the power performances of HEMT's in the Ka-band

Gaquiere, C. ; Bonte, B. ; Piotrowicz, S. ; Bourcier, E. ; Crosnier, Y. (1996) Analysis of extrinsic element influence on the power performances of HEMT's in the Ka-band. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Abstract

This paper provides an experimental microwave analysis of performance decrease of interdigitated HEMT's in millimeter wave range as the total gate width increases. The source inductance has been identified as the main reason of the power density decrease for large gate periphery devices. These behaviour has been checked by large signal measurements in Ka band.

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