Distributed GaAs-PHEMT 0.2um preamplifier for 20 Gbit/s photoreceivers.

Legros, E. ; Merrar, A. ; Billard, M. ; Joly, C. ; Blanconnier, P. (1996) Distributed GaAs-PHEMT 0.2um preamplifier for 20 Gbit/s photoreceivers. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

A 20 Gb/s photoreceiver module has been realized with a transimpedance of 63 dBOhm. The bandwidth is 16 GHz, and the average equivalent input noise is 13 pA/(Hz)1/2 up to 14 GHz. This photoreceiver is realized by cascading three distributed preamplifiers processed in a GaAs PHEMT 0.2um gate length technology.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Legros, E.
Merrar, A.
Billard, M.
Joly, C.
Blanconnier, P.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:37
URI

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