Fawaz, Hussein ; Thiery, Jean-Francois ; Linh, Nuyen ; Mollot, Francis ; Pesant, Jean-Claude ; Francois, Marc ; Muller, Michel ; Delos, E. ; Salmer, Georges
(1996)
III-V complementary HIGFET technology for low power microwave and high speed/low power digital integrated circuits.
In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract
A self aligned complementary HIGFET technology has been developed for high speed/low power digital and microwave analog applications. The process uses 9 lithographic steps including two level of interconnect metal. Typical transconductances of 290 mS/mm and 65 mS/mm are acheived on lum gate length N and P-channel devices respectively. 0.5 um gate length N-HIGFET show a Ft of 40 GHz and an intrinsic Fc of 80 GHz. These devices show promise for incorporation in complementary digital, MMIC and RF power circuits.
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