Current gain mechanism in planar GaAs MESFETs due to new photovoltaic self-biasing edge-effect.

Abbott, Derek ; Eshraghian, K. (1996) Current gain mechanism in planar GaAs MESFETs due to new photovoltaic self-biasing edge-effect. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Abstract

A significant new internal gain effect, in planar MESFETs has been discovered which we call the "photovoltaic self-biasing edge-effect." The edge-effect can be exploited to attain up to a factor of ten improvement in detector photosensitivity.

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