Power P-HEMT realization on MOVPE structures

Caligiore, A. ; Di Paola, A. ; Di Egidio, M. ; Germagnoli, A. ; Grassi, E. ; Pansini, E. ; Parravicini, S. ; Ritchie, D. ; Tromby, M. ; Vidimari, F. (1994) Power P-HEMT realization on MOVPE structures. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

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Abstract

The paper presents the fabrication of power P-HEMTs on epitaxial structures grown by low pressure MOVPE technology featuring a Si planar doped (? doped) A0.22GaAs supply layer. The use of such a doping technology whose great potential has already been demonstrated by MBE grown structures, has been successfully applied (to our knowledge) for the first time to P-HEMT devices realized by LP-MOVPE, showing substantially improved device characteristics.

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