Power P-HEMT realization on MOVPE structures

Caligiore, A. ; Di Paola, A. ; Di Egidio, M. ; Germagnoli, A. ; Grassi, E. ; Pansini, E. ; Parravicini, S. ; Ritchie, D. ; Tromby, M. ; Vidimari, F. (1994) Power P-HEMT realization on MOVPE structures. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract

The paper presents the fabrication of power P-HEMTs on epitaxial structures grown by low pressure MOVPE technology featuring a Si planar doped (? doped) A0.22GaAs supply layer. The use of such a doping technology whose great potential has already been demonstrated by MBE grown structures, has been successfully applied (to our knowledge) for the first time to P-HEMT devices realized by LP-MOVPE, showing substantially improved device characteristics.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Caligiore, A.
Di Paola, A.
Di Egidio, M.
Germagnoli, A.
Grassi, E.
Pansini, E.
Parravicini, S.
Ritchie, D.
Tromby, M.
Vidimari, F.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:41
URI

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