Abstract

Techniques are presented for scale modelling interdigitated Planar Schottky Varactor Diodes (PSVDs) using an equivalent circuit model. A selection of low cost GaAs devices, with variations in the finger width and number of anode fingers, have been fabricated, measured and accurately characterized - well into the millimetric frequency range. From the results, a number of useful design rules are presented for the optimal choice of interdigitated PSVD topography. With the use of these rules, a 24x300 um experimental PSVD was accurately characterised.