Bias conditions for accurate parasitics evaluation of microwave MESFETs up to mm-wave frequencies

Leuzzi, G. ; Deiseroth, K. ; Giannini, F. ; DeSantis, B. (1992) Bias conditions for accurate parasitics evaluation of microwave MESFETs up to mm-wave frequencies. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.

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Abstract

The correct conditions for the accurate evaluation of parasitic elements in microwave and millimetre-wave MESFETs from measurements are described. The elements are evaluated directly without any "fitting" procedure, and prove to be bias-independent and constant up to mm-wave frequencies. The intrinsic elements can then be accurately evaluated, and a bias-dependent, non-linear model established.

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