Bias conditions for accurate parasitics evaluation of microwave MESFETs up to mm-wave frequencies

Leuzzi, G. ; Deiseroth, K. ; Giannini, F. ; DeSantis, B. (1992) Bias conditions for accurate parasitics evaluation of microwave MESFETs up to mm-wave frequencies. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
Full text available as:
[thumbnail of GAAS_92_020.pdf]
Preview
PDF
Download (1MB) | Preview

Abstract

The correct conditions for the accurate evaluation of parasitic elements in microwave and millimetre-wave MESFETs from measurements are described. The elements are evaluated directly without any "fitting" procedure, and prove to be bias-independent and constant up to mm-wave frequencies. The intrinsic elements can then be accurately evaluated, and a bias-dependent, non-linear model established.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Leuzzi, G.
Deiseroth, K.
Giannini, F.
DeSantis, B.
Subjects
DOI
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:45
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^