Physical simulation: a tool for technological evaluation and optimization of GaAs MESFET devices

Benvenuti, A. ; Cetronio, A. ; Ghione, G. ; Liberati, R. ; Naldi, C.U. ; Pirola, M. (1990) Physical simulation: a tool for technological evaluation and optimization of GaAs MESFET devices. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

The- paper presents a case study on the technological optimization of GaAs MESFETs by means of a. two-dimensional physical DC and small-signal simulator (MESS). Two examples are discussed, the first concerning the dose and recess optimization of an analog device, the second, the recess optimization of a MESFET series or parallel switch.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Benvenuti, A.
Cetronio, A.
Ghione, G.
Liberati, R.
Naldi, C.U.
Pirola, M.
Subjects
DOI
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:47
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