Donzelli, P. ; Ghione, G. ; Naldi, C.U.
(1990)
Thermal models for low- and high-power GaAs MESFET devices.
In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract
The paper addresses the problem of thermal design of MESFET devices. Two CAD models are pro posed for performance evaluation: a closed-form thermal resistance model and a two-dimensional self-consistent coupled physical model. The two models are complementary and allow both to optimize the geometry and to correctly estimate the small-scale temperature distribution and the influence of heating on the electrical perfor mances, Results from both models are discussed and compared with measurements.
Abstract