Thermal models for low- and high-power GaAs MESFET devices

Donzelli, P. ; Ghione, G. ; Naldi, C.U. (1990) Thermal models for low- and high-power GaAs MESFET devices. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

The paper addresses the problem of thermal design of MESFET devices. Two CAD models are pro­ posed for performance evaluation: a closed-form thermal resistance model and a two-dimensional self-consistent coupled physical model. The two models are complementary and allow both to optimize the geometry and to correctly estimate the small-scale temperature distribution and the influence of heating on the electrical perfor­ mances, Results from both models are discussed and compared with measurements.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Donzelli, P.
Ghione, G.
Naldi, C.U.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:47
URI

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