Influence of recess shape on the noise and gain performance of FET's in the millimeter wave range

Dambrine, G. ; Cappy, A. ; Guillerme, Y. (1990) Influence of recess shape on the noise and gain performance of FET's in the millimeter wave range. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

The effect of the recess shape on the FET noise performance is investigated from a theoretical point of view. The noise modelling is based on quasi two dimensional calculation including non stationary transport. The degradation of the noise figure with the recess-to-gate and gate-to-recess distances is emphasized.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Dambrine, G.
Cappy, A.
Guillerme, Y.
Settori scientifico-disciplinari
DOI
Data di deposito
02 Feb 2006
Ultima modifica
17 Feb 2016 14:48
URI

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