Influence of recess shape on the noise and gain performance of FET's in the millimeter wave range

Dambrine, G. ; Cappy, A. ; Guillerme, Y. (1990) Influence of recess shape on the noise and gain performance of FET's in the millimeter wave range. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
Full text available as:
[thumbnail of GAAS_90_037.pdf]
Preview
PDF
Download (1MB) | Preview

Abstract

The effect of the recess shape on the FET noise performance is investigated from a theoretical point of view. The noise modelling is based on quasi two dimensional calculation including non stationary transport. The degradation of the noise figure with the recess-to-gate and gate-to-recess distances is emphasized.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Dambrine, G.
Cappy, A.
Guillerme, Y.
Subjects
DOI
Deposit date
02 Feb 2006
Last modified
17 Feb 2016 14:48
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^