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Lapin, V.G. ; Temnov, A.M. ; Krasnik, V.A. ; Petrov, K.I.
(2000)
GAAS Microwave offset gate self-aligned MESFETs and their applications.
In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
The present paper is devoted to microwave transistors, developed in SRPC "Istok". Design, fabrication and characteristics of power and low noise GaAs MESFET's and their applications are presented in this paper. The low noise MESFETs exhibit a noise figure of 1.2 dB at 15 GHz and power MESFET's show an output power density of 0.5 W/mm, with a typical power-added efficiency of 35% and thermal resistance of 10-12 °C/W for a MESFET with a total gate width of 4mm.
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