Abstract

High efficiency 50W GaAs power device h s been developed using two high bre kdown voltage G As FET chips that have an AlGaAs/GaAs heterostructure.Circuit designing considerations include the termination of the second-harmonics for improved power added efficiency.The resultant output power at the 3dB g in compression point is 47.0dBm with 58%power added efficiency (PAE)and 15.0 dB linear gain at 1.6GHz. To the uthors ’knowledge,this is the highest efficiency for 50-w tt G As device in the industry.