A L-BAND 50-WATT GaAs Power FET with 58% power added efficiency

Hayashi, Hisanori ; Ui, Norihiko ; Saito, Toshiaki ; Fukaya, Jun (2000) A L-BAND 50-WATT GaAs Power FET with 58% power added efficiency. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

High efficiency 50W GaAs power device h s been developed using two high bre kdown voltage G As FET chips that have an AlGaAs/GaAs heterostructure.Circuit designing considerations include the termination of the second-harmonics for improved power added efficiency.The resultant output power at the 3dB g in compression point is 47.0dBm with 58%power added efficiency (PAE)and 15.0 dB linear gain at 1.6GHz. To the uthors ’knowledge,this is the highest efficiency for 50-w tt G As device in the industry.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Hayashi, Hisanori
Ui, Norihiko
Saito, Toshiaki
Fukaya, Jun
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:42
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