Menozzi, R.
(2000)
Breakdown and high-field reliability issues in heterojunction FETs for microwave power amplification.
In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text available as:
Preview |
PDF
Download (118kB) | Preview |
Abstract
High-field reliability issues connected with hot electron and impact ionization are typically the reliability bottleneck of power FETs for microwave and millimeter-wave applications. This work deals with some aspects of this problem, from characterization and accelerated stressing techniques to the physical degradation mechanisms, using power AlGaAs/GaAs HFETs as a test vehicle.
Abstract