Zoschg, Dietmar ; Wilhelm, Wilhelm ; Knapp, Herbert ; Aufinger, K. ; Bock, Josef ; Meister, T.F. ; Wurzer, Martin ; Wohlmuth, Hans-Dieter ; Scholtz, Arpad L.
(2000)
Monolithic Low-Noise Amplifiers up to 10 GHz in Silicon and SiGe Bipolar Technologies.
In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
The noise properties of silicon and SiGe bipolar technologies at identical de- sign rules are evaluated by theory and by ex- perimental LNAs designed for the frequen- cies of 2 GHz, 6 GHz, and 10 GHz. For a fair comparison the same circuit principle is used for all six LNAs, with gain of about 20 dB or above, suitable for the applications in wireless communications.
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