Abstract

A very high efficient, low distortion C-band power amplifier using a linear and non-linear models of the PHEMT devices has been developed. Single stage amplifier fabricated with 4x18mm gate width PHEMT devices exhibits a power output of 44 dBm at 2dB of gain compression, a linear gain of 11.5dB and an associated PAE from 50% to 52% in the frequency range of 3.6-3.9GHz. These excellent results are performed by developing an accurate non-linear model of the PHEMT device, the 2.5D electromagnetic simulation of the passive structures and optimizing the output matching network of the amplifier by using a high dielectric substrate with low insertion loss.