Abstract

A statistical non-linear model of GaAs FET MMIC ’s which makes use of principal components to describe distance-dependent variations of technological parameters is presented.The proposed model is composed of a nominal non-linear model for the GaAs FET and a correlation matrix which accounts for correlation among parameters of the active devices on the MMIC.The correlation matrix is orthogonalised and reduced by using the Principal Component Analysis (PCA)technique. Capability to reproduce statistical distribution has been checked by comparing measured and modelled S-parameters in the 1-50 GHz frequency range by means of hypothesis tests of equivalence.