Three-Dimensional Electromagnetic Approach to the Modeling of Linear Field Effect Transistors

Farina, M. ; Rozzi, Tullio (2003) Three-Dimensional Electromagnetic Approach to the Modeling of Linear Field Effect Transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

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Abstract

In this contribution we introduce a 3D electromagnetic approach to the modeling of active devices under the small-signal hypothesis. The proposed technique is validated by comparing measured and calculated results for a pseudomorphic High Electron Mobility Transistor (HEMT) in the millimeter-wave range.

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