Three-Dimensional Electromagnetic Approach to the Modeling of Linear Field Effect Transistors

Farina, M. ; Rozzi, Tullio (2003) Three-Dimensional Electromagnetic Approach to the Modeling of Linear Field Effect Transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
Full text available as:
[thumbnail of G_03_02.pdf]
Preview
PDF
Download (144kB) | Preview

Abstract

In this contribution we introduce a 3D electromagnetic approach to the modeling of active devices under the small-signal hypothesis. The proposed technique is validated by comparing measured and calculated results for a pseudomorphic High Electron Mobility Transistor (HEMT) in the millimeter-wave range.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Farina, M.
Rozzi, Tullio
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:51
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^