Abstract

A compact and robust InGaP-GaAs HBT model has been developed for accurate large-signal and linearity simulations. In addition to self-heating, the model takes into account the non-quasi-static charge effects, which include collector mobile charge effects, collector transit time effects, and other dynamic charge effects. The new model, in contrast to conventional HBT models, predicts very well the large gain expansion at class AB operation and also the distortion, such as IP3, at various harmonic load conditions. The model is semi-physically based and, therefore, can be used to assess the effects of physical parameters on linearity, such as collector doping.