RF Power performance of passivated ALGAN/GAN hfets grown on sic and sapphire

Leier, H. ; Wieszt, A. ; Behtash, R. ; Tobler, H. ; Vescan, A. ; Dietrich, R. ; Schurr, A. ; Sledzik, H. ; Birbeck, JCH. ; Balmer, R. S. ; Martin, T. (2001) RF Power performance of passivated ALGAN/GAN hfets grown on sic and sapphire. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

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Abstract

We have analysed the impact of SiN surface passivation on the performance of undoped (piezo) AlGaN/GaN HFETs grown on SiC and sapphire. Though there is little change after passivation in carrier concentration and mobility as evidenced by Hall measurements the RF power performance is significantly improved leading to state of the art power densities of up to 6.5 Watt/mm at 10GHz and absolute power of 6.6 Watt cw for a 1.2mm piezo device on SiC substrate.

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