High Power LDMOS technology for wireless infrastructure

Litwin, A. ; Chen, Q. ; Johansson, J. ; Ma, G. ; Olofsson, L-A. ; Perugupalli, P. (2001) High Power LDMOS technology for wireless infrastructure. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

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Abstract

The progress in wideband cellular systems was followed by the development of the necessary transistor technology. This contribution describes microwave LDMOS transistors used in RBS (Radio Base Station) amplifiers. We discuss the issues of the manufacturing process, packaging, reliability, RF performance and models necessary for successful devices for 3G systems at 2.1 - 2.2 GHz.

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