High Power LDMOS technology for wireless infrastructure

Litwin, A. ; Chen, Q. ; Johansson, J. ; Ma, G. ; Olofsson, L-A. ; Perugupalli, P. (2001) High Power LDMOS technology for wireless infrastructure. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract

The progress in wideband cellular systems was followed by the development of the necessary transistor technology. This contribution describes microwave LDMOS transistors used in RBS (Radio Base Station) amplifiers. We discuss the issues of the manufacturing process, packaging, reliability, RF performance and models necessary for successful devices for 3G systems at 2.1 - 2.2 GHz.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Litwin, A.
Chen, Q.
Johansson, J.
Ma, G.
Olofsson, L-A.
Perugupalli, P.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:34
URI

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