Abstract

In this paper, we present a 22-GHz ultra low phase noise push-push dielectric resonator oscillator (DRO) using MMICs fabricated by 2- m GaAs HBT process. This circuit demonstrated a low phase noise of -114 dBc/Hz and -134 dBc/Hz at offset frequency of 100 kHz and 1 MHz, respectively. The second harmonic output power is above 6 dBm with a fundamental suppression of over 30 dBc. This DRO exhibits good phase noise performance based on the figure-of-merit carrier frequency, offset frequency, and dc power compared with the reported push-push DRO, which is due to low 1/f noise HBT and reproducible MMIC chips. In addition, this is the first reported push-push DRO implemented using MMICs.