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Number of documents:63.

De Raedt, W. and Brebels, S. and Monfraix, Ph. and Carchon, G. and Jourdain, Anne and Tilmans, Harrie A.C. (2001) 0-Level packaging techniques for flip-chip mounted MMICs. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bollaert, S. and Wallart, X. and Lepilliet, S. and Cappy, A. and Jalaguier, E. and Pocas, S. and Aspar, B. (2001) 0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Monteiro, Paulo P. and Violas, Manuel and Sousa Ribeiro, Rui and Ferreira da Rocha, José (2001) 40 Gbit/s GaAs MMIC Signal Processor for Optical Communication Systems. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bartocci, M. and De Santis, G. and Giolo, G. and Rossi, L. and Gemma, M. (2001) 4W TX/RX Multi Chip Module for 6-18GHz Phased Array. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Zelley, C. A. and Barnes, A. R. and Ashcroft, R. W. (2001) A 60 GHz double balanced sub-harmonic mixer MMIC. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Wei, C.-J. and Gering, J. and Sprinkle, S. and Tkachenko, Y.A. and Bartle, D. (2001) A Compact, semi-physically based model predicts accurate aower and linearity of power InGaP HBTs. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Morioka, Shigeki and Yokoi, Kiyotaka and Yoshida, Katsuyuki and Shirasaki, Takayuki (2001) A DC to 40GHz Low Cost Surface Mountable RF-VIA TM Package. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Kim, Youngsik and Kim, JiYoun and Kim, Sungwoo and Kim, Bumman (2001) A Novel method for the Higher Order components extraction of the Channel current in GaAs MESFET. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Masini, Leonardo and Pozzoni, Massimo and Caliumi, Alberto and Tomasini, Luciano and Morigi, Damiana and Lemaire, Frederic (2001) A fully integrated silicon-germanium X-Band VCO. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Simbürger, W. and Bakalski, W. and Kehrer, D. and Wohlmuth, H.D. and Rest, M. and Aufinger, K. and Boguth, S. and Scholtz, A. L. (2001) A monolithic 5.8 GHZ power amplifier in a 25 GHZ FT Silicon Bipolar technology. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Sercu, Jeannick and Knockaert, Luc and De Zutter, Daniel (2001) A new mesh reduction technology for the method of moments modelling of planar RF and microwave interconnects. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Malaver, Emigdio and Garcia, José Angel and Tazon, Antonio and Mediavilla, Angel (2001) A novel approach for highly linear automatic gain control of a hemt small-signal amplifier. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Cidronali, A. and Collodi, G. and Deshpande, M. and El-Zein, N. and Manes, G. and Nair, V. (2001) A proposal of a bi-directional amplifier based on tunneling diodes for RF tagging system. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Kantanen, M. and Lahdes, M. and Tuovinen, J. and Vähä-Heikkilä, T. and Kangaslahti, P. and Jukkala, P. and Hughes, N. (2001) A wideband automated measurement system for on-wafer noise parameter measurements at 50-75 GHZ. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Tocca, L. and Di Carlo, A. and Berliocchi, M. and Lugli, P. and Bartocci, M. and De Santis, G. and Giolo, G. and Rossi, L. and Gemma, M. (2001) Accurate estimation of layer temperature in PHEMT MMIC by photoconductance measurements. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

de Hek, A.P. and de Boer, A. and Svensson, T. (2001) C-band 10-Watt HBT High-power Amplifier with 50% PAE. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Deluca, P.M. and Landini, B.E. and Welser, R. E. (2001) Carbon Doped InP/InGaAs Heterojunction Bipolar Transistors Grown By MOCVD. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Schreurs, D. and De Raedt, W. and Vandersmissen, R. and Neuhaus, B. and Beyer, A. and Nauwelaers, B. (2001) Correlation between the reliability of HEMT devices and that of a combined oscillator-amplifier. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Nakano, Hiroshi and Yamawaki, Hiromoto and Hirachi, Yasutake (2001) Cost-Effective 60-GHz Modules with Phase-Noise of -110dBc/Hz at 100KHz Offset using Novel Self-Heterodyne Scheme. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Meng, C. C. and Lu, S. S. and Chen, H. C. and Chiang, M. H. and Kuan, J. F. and Lin, D. C. and Huang, G. W. (2001) DC-8 GHz 11 dB Gain GaInP/GaAs HBT Double balanced Gilbert Micromixer. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Tentzeris, M. and Laskar, J. and Sutono, A. and Lee, C.–H. and Davis, M.F. and Obatoyinbo, A. and Lim, K. (2001) Development of Highly Integrated 3D Microwave - Millimeter Wave Radio Front-End System-on-Package (SOP). In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Carbonera, F. and Bertazzi, F. and Goano, M. and Ghione, G. (2001) Efficient CM-FEM modeling of coplanar waveguides for high-speed e/o modulators. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bignamini, M. and Favre, G. and Meazza, A. and Pagani, M. and Palomba, F. and Sivverini, G. (2001) Efficient development of highly linear MMIC power amplifiers. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Rodriguez-Tellez, J. and Ali, N.T. and Fernandez, T. and Mediavilla, A. and Tazon, A. (2001) Electric field dependency of traps in mesfet/hemt devices. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Gorelenok, A.T. and Andrievskii, V.F. and Kamanin, A.V. and Kohanovskii, S.I. and Shmidt, N.M (2001) Electrical and photoluminescence properties of bulk GaAs after surface gettering. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Fagan, Christopher J. and Snowden, Christopher M. (2001) Electro-Thermal modelling of very High power Microwave bipolar Junction transistors. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Stevens, K.S. and Welser, R. E. and Deluca, P.M. and Landini, B. E. and Lutz, C. R. and Wolfsdorf-Brenner, T. L. (2001) Enhanced Performance GaAs-Based HBTs using a GaInNAs Base Layer. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Santarelli, A. and Zucchelli, G. and Paganelli, R. and Vannini, G. and Filicori, F. (2001) Equivalent-voltage description of low-frequency dispersive effects in large-signal fet models. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Dienelt, J. and Zimmer, K. and Rauschenbach, B. (2001) Etching behaviour of GaAs with chlorine chemically assisted ion beam etching depending on the surface temperature. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Panks, A. J. and Batty, W. and David, S. and Johnson, R. G. and Snowden, C. M. (2001) Fully physical electro-thermal CAD for Power FET optimisation by Non Uniform Finger Spacing. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Jolly, C. and Keenan, R. and Hug, J. and Lucek, J. and Ou, S. and Bonaguide, G. and Osman, S. and Wagemans, A. (2001) GaAs HBT PA module design for CDMA handsets. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Théron, D. and Cordier, Y. and Wallart, X. and Bollaert, S. and Zaknoune, M. and Boudrissa, M. and Bonte, B. and Gaquière, C. and Rousseau, M. and Dessenne, F. and Mollot, F. and Cappy, A. and Fauquembergue, R. and De Jaeger, J.C. (2001) Hemt structures and technology on GAAS and inp for power amplification in millimetre wave range. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Litwin, A. and Chen, Q. and Johansson, J. and Ma, G. and Olofsson, L-A. and Perugupalli, P. (2001) High Power LDMOS technology for wireless infrastructure. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Virk, Robinder S. and Bos, Thomas A. and Camargo, E. and Hasegawa, Yuichi (2001) High dynamic range MMIC converters for LMDS applications. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Enciso, M. and Aniel, F. and Giguerre, L. and Crozat, P. and Adde, R. (2001) High frequency properties of Si/SiGe n-MODFETs: dependence on gate length and temparture. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Kamenopolsky, Stanimir and Dankov, Plamen (2001) High performance test fixture for 10-Port MMIC's characterisation. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Floriot, D. and Delage, S. L. and Piotrowicz, S. and Chartier, E. and Auxemery, P. (2001) High power HBT technologies : present and trends. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Manfrin, S.K. and Orengo, G. and Giannini, F. and Romero, M. A. (2001) High tuning speed optical receiver front-end for packet-switched WDM Networks. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Madonna, G. L. and Pfost, M. and Schultheis, R. and Mueller, J.E. (2001) Investigations of linearity characteristics for larege-emitter area GaAs HBT power stages. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Colicchia, L. and Comparini, M.C. and Di Nardo, S. and Leone, C. and Giordano, M. and Ranieri, P. and Suriani, A. and Tursini, M. (2001) Ku & C Band solid state switch matrix for satellite payloads using LTCC multilayer substrate. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bouisse, Gerard (2001) Latest advances in high power SI MMIC. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Sueamtsu, N. and Ono, M. and Nakajima, K. (2001) Low Loss On-chip passive components for Si-MMIC by using CPW structure. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Danneville, F. and Tamen, B. and Cappy, A. and Juraver, J-B and Llopis, O. and Graffeuil, J. (2001) Low frequency noise conversion in fets under nonlinear operation. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Aja, B. and de la Fuente, M.L. and Pascual, J.P. and Mediavilla, A. and Artal, E. (2001) Low noise monolithic Ka-BAND P-HEMT amplifier for space applications. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Sutton, William and Alekseev, Egor and Pavlidis, Dimitris (2001) Microwave and DC Performance of AlGaN/GaN HEMTs Grown on Si using a New Growth Technique. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Kriz, Jeff (2001) Mixed Mode Silicon-on-Insulator MMIC Technology for digitally controlled RF/Microwave Systems. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Gould, P. and Lin, J. and Boric-Lubecke, O. (2001) NMOS SPDT Switch MMIC with >44 dB Isolation and 30 dBm IIP3 for Applications within GSM and UMTS bands. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bouysse, Ph. and Barataud, D. and Sommet, R. and Teyssier, J.P. and Nébus, J.M. and Quéré, R. (2001) New trends in characterization and modeling of High Power devices. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Kim, Woonyun and Kang, Sanghoon and Lee, Kyungho and Chung, Minchul and Kim, Bumman (2001) Non linear behavior of power HBT. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Villemazet, JF. and Rogeaux, E. and Roques, D. and Cayrou, Jean-Christophe and Cogo, B. and Solulard, M. and Cazaux, Jean-Louis (2001) Novel compact double balanced coplanar active mixer Application to a single chip MMIC receiver for satellite repeater. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Sannino, M. and Caddemi, A. and Donato, N. (2001) On wafer thermal investigation of gaas-based microwave transistors by a thermoelectric system. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Bianco, P. and Donati Guerrieri, S. and Ghione, G. and Pirola, M. and Naldi, C.U. and Florian, C. and Vannini, G. and Santarelli, A. and Filicori, F. and Manfredi, L. (2001) Optimum design of a new predistortion scheme for high linearity K-band MMIC power amplifiers. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Olavsbråten, Morten (2001) Parameter extraction and evaluation of the Bias dependence of Tf, for the VBIC Model used on a GaAs HBT. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Rudiakova, Anna N. and Krizhanovski, Vladimir G. and Kazimierczuk, Marian K. (2001) Phase tuning approach for polyharmonic power amplifiers. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Walden, Mark G. (2001) Pulsed power operation of commercially available silicon carbide mesfets. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Joodaki, M. and Senyildiz, T. and Kompa, G. and Hillmer, H. and Leinhos, T. and Kassing, R. (2001) Quasi-Monolithic integration technology (QMIT) for power applications. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Leier, H. and Wieszt, A. and Behtash, R. and Tobler, H. and Vescan, A. and Dietrich, R. and Schurr, A. and Sledzik, H. and Birbeck, JCH. and Balmer, R. S. and Martin, T. (2001) RF Power performance of passivated ALGAN/GAN hfets grown on sic and sapphire. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Cappelluti, F. and Bonani, F. and Donati Guerrieri, S. and Ghione, G. and Naldi, C. U. and Peroni, M. and Cetronio, A. and Graffitti, R. (2001) Self-consistent fully dynamic electro-thermal simulation of power HBTS. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Saint-Etienne, Eric and Reig, Bruno and Deborgies, F. and Ghesquiers, Jean-Pierre and Roques, Daniel and Le Meur, Gerard and Cogo, B. and Mancuso, Yves (2001) Silicon Packaging and RF Solder-free Interconnect for X-band SAR T/R Module. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Lopez, D. and Sommet, R. and Quéré, R. (2001) Spice Thermal Subcircuit of Multifinger HBT derived from Ritz Vector reduction technique of 3D Thermal Simulation for electrothermal modeling. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Schreurs, D. and Verspecht, J. and Acciari, G. and Colantonio, P. and Giannini, F. and Limiti, E. and Leuzzi, G. (2001) Theoretical and experimental assessment of the non-linear scattering functions for the cad of non-linear microwave circuits. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Linnik, M. and Christou, A. (2001) Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

Murgadella, F. and Coulon, P. and Moreau, C. (2001) X-BAND technologies and MMICS comparison for active phased Array Radar. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

This list has been generated onMon Apr 19 20:39:28 2021 CEST.
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