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Number of documents:86.

Lee, M. and Kim, Y. M. (1996) 10 GHz ultra-high speed GaAs decision circuit design. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Demange, D. and Billard, M. and Lefevre, R. (1996) 20 Gb/s electroabsorption modulator drivers based on 0.2 um GaAs PHEMT. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Lopez, J.F. and Sarmiento, R. and Nunez, A. and Eshraghian, K. (1996) A 2ns/660mW GaAs 5Kbit ROM using low leakage current FET circuit (L2FC). In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ghione, G. and Goano, M. and Naldi, C. U. (1996) A CAD-oriented model for the ohmic losses of multiconductor coplanar lines in hybrid and monolithic MIC's. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Beaurin, O. and Royannez, P. and Amara, A. and Chaput, J.P. (1996) A GaAs data-path compiler. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Mehnert, Andrew and Burgess, Neil and Eshraghian, K. and Kuczborski, Wojciech and Sarmiento, Roberto (1996) A GaAs video rate morphological processor for image coding and compression. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Pillan, Margherita and Salice, Fabio and Ghione, Giovanni (1996) A constraint generation tool for the design of high frequency integrated circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Alonso, Jose I. and Lopez, Ernesto J. and Mahfoudi, Mustapha (1996) A design technique for GaAs MMIC differential amplifiers based on physical parameters of the foundry. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Bressan, M. and Conciauro, G. and Gamba, P. (1996) A fast EM simulator for the wideband analysis of multiconductor buses for MMIC's and high-speed digital circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Baeyens, Y. and Schreurs, D. and Nauwelaers, B. and Van der Zanden, K. and Van Hove, M. and De Raedt, W. and Van Rossum, M. (1996) A high-gain coplanar GaAs PHEMT K-band dual-gate amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ribas, R.P. and Bernal, A. and Guyot, A. (1996) A low-power differential cross-coupled FET logic for GaAs asynchronous design. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Valkov, S. and Derzkii, D. and Temcamani, F. and Pouvil, P. (1996) A new auto-coherent bias dependent charge model for MESFETs and HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Giannini, Franco and Limiti, Ernesto and Orengo, Giancarlo (1996) A novel single-bias ultra-wideband monolithic pulse amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Tieman, T.C.B. and van Vliet, F.E. and van den Bogaart, F.L.M. and Tauritz, J.L. (1996) A tuneable GaAs MMIC band stop filter at X-band with a novel active inductor. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Le Normand, Jean-Pierre and Alain Perichon, Robert (1996) An active microwave transmission delay equalizer. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Bonani, F. and Donati, S. and Ghione, G. and Pirola, M. and Naldi, C.U. (1996) An efficient physics-based CAD approach to evaluate the sensitivity of GaAs devices with respect to process parameters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Plana, R. and Parra, T. and Zanchi, C. and Dienot, J.M. and Gayral, M. and Villard, M.J. and Martin, J.C. and Tizien, P.G. and Graffeuil, J. (1996) An exhaustive non-linear modelling of GaInP/GaAs HBT's - Application to a low phase noise Ku band VCO. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Lu, Ke and Snowden, Christopher M. and Pollard, Roger D. (1996) Analysis of collapse patterns in multi-finger power AlGaAs/GaAs HBTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Gaquiere, C. and Bonte, B. and Piotrowicz, S. and Bourcier, E. and Crosnier, Y. (1996) Analysis of extrinsic element influence on the power performances of HEMT's in the Ka-band. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Guillouard, K. and Wong, M.F. and Fouad Hanna, V. and Citerne, J. (1996) Analysis of lossy transmission lines for GaAs MMIC technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ajram, S. and Kozlowski, Romain and Van de Velde, Jean Claude and Salmer, Georges (1996) Application of GaAs power devices to very - high - frequency and high - efficiency DC to DC power converters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Giorgio, A. and Perri, A. G. and Castagnolo, B. (1996) Automatic design of GaAs MESFETs for thermal effect optimization. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Colquhoun, A. and Meinel, Holger (1996) Automotive applications of GaAs components. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Lour, Wen-Shiung and Tsai, Jung-Hui and Liu, Wen-Chau and Chen, H. R. (1996) Characteristics of InGaP/GaAs single- heterojunction bipolar transistor with zero potential-spike by δ-doped sheet. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Aniel, F. and Sylvestre, A. and Jin, Y. and Crozat, P. and de Lustrac, A. and Vernet, G. and Adde, R. (1996) Comparative evolutions of short gate InGaAs channel HEMTs on InP and GaAs at cryogenic temperatures. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Meneghesso, Gaudenzio and Paccagnella, Alessandro and Haddab, Youcef and Canali, C. and Zanoni, Enrico (1996) Correlation between permanent degradation of GaAs-based HEMT´s and current DLTS spectra. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Abbott, Derek and Eshraghian, K. (1996) Current gain mechanism in planar GaAs MESFETs due to new photovoltaic self-biasing edge-effect. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Vashchenko, V.A. and Martynov, J.B. and Sinkevitch, V.F. and Tager, A.S. (1996) Current instability and burnout under MESFET gate breakdown. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Pascual, J.P. and Portilla, J. and Artal, E. (1996) Design approaches for oscillators in low microwave bands. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Laporte, E. and Maurin, P. and Nallatamby, J. C. and Reffet, D. and Prigent, M. and Obregon, J. (1996) Design of state of art low noise VCO using MMIC negative resistance modules. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ndagijimana, Fabien and Chilo, Jean (1996) Design of very high performance packages for microwave GaAs IC's. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Legros, E. and Merrar, A. and Billard, M. and Joly, C. and Blanconnier, P. (1996) Distributed GaAs-PHEMT 0.2um preamplifier for 20 Gbit/s photoreceivers. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Langrez, D. and Diette, F. and Theron, D. and Delos, E. and Salmer, G. (1996) Dual gate pseudomorphic HEMT for low noise amplification in millimeter wave range. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Brazil, Thomas J. (1996) EDGE: Europe's new ESPRIT project in high-frequency CAD. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Desrousseaux, P. and Konczykowska, Agnieszka (1996) Efficient method for the design of high-speed bipolar decision circuit. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Golshani, A. and Hainberger, R. and Freisleben, S. and Kock, A. and Gornik, E. and Gmachl, C. and Korte, L. (1996) Efficient surface emitting AlGaAs/GaAs laser diodes based on first-order-grating-coupled surface mode emission. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Sylvestre, A. and Aniel, F. and Boucaud, P. and Julien, F.H. and Jin, Y. and Crozat, P. and de Lustrac, A. and Adde, R. (1996) Electroluminescence study of "on" and "off state breakdown in InP based HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Poplavko, Y.M. and Moskalyuk, V.A. and Timofeyev, A.I. and Prokopenko, Y.V. and Pereverzeva, L.P. (1996) Feasibility of one-crystal GaAs artificial pyroelectric array. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Vashchenko, V.A. and Martynov, J.B. and Sinkevitch, V.F. and Tager, A. S. (1996) Formation and evolution of spatial dissipate structures in GaAs n-i-n structures. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Devlin, L. and Buck, B. J. and Clifton, J. C. and Dearn, A.W. and Geen, M. W. and Long, A. P. and Melvin, S. P. (1996) GaAs application specific MMICs for a HIPERLAN MCM. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Morales, J. and Suarez, A. and Sarkissian, J. C. and Quere, R. (1996) Global stability analysis of a broadband MMIC frequency divider in millimetric band. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Jay, Paul R. (1996) Good things come in small (high speed) packages. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Larciprete, N. and Loriga, F. and Marietti, P. and Trifiletti, A. (1996) High CMRR GaAs single-input to differential convertor. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Camiade, M. and Dourlens, C. and Serru, V. and Savary, P. and Blanc, J.C (1996) High performance MMICs for automotive radar application at 77 GHz. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Cocco, V. and Marietti, P. and Trifiletti, A. (1996) High yield design of MMIC transimpedance amplifiers for multigigabit optical transmission systems. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Kosov, A.S. and Vald-Perlov, V.M. and Zotov, V.A. (1996) High-efficiency powerful millimeter wave varactor multiplier. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Liu, W. C. and Laih, L. W. and Wu, C. Z. and Cheng, C. C. and Lin, K. W. and Chen, H. R. (1996) High-performance of InGaAs/GaAs doped-channel heterostructure field-effect transistor (HFET) prepared by MOCVD. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Cabon, B. and Hilt, A. and Vilcot, A. and Czotscher, K. and Weisser, S. and Berceli, T. (1996) Hybrid integration of laser diode chips on a glass substrate. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Fawaz, Hussein and Thiery, Jean-Francois and Linh, Nuyen and Mollot, Francis and Pesant, Jean-Claude and Francois, Marc and Muller, Michel and Delos, E. and Salmer, Georges (1996) III-V complementary HIGFET technology for low power microwave and high speed/low power digital integrated circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Esper-Chain, R and Lassen, P.S. and Lopez, J.F. and Sarmiento, R. (1996) Implementation of a 2.5Gb/s ATM transceiver in GaAs technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Laneve, T. and Do-Ky, H. and Watson, P. and Stubbs, M. G. (1996) Implementation of a large-signal HBT model in Libra. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Scavennec, Andre (1996) InP microelectronics reaching maturity. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Horstmann, M. and Hardtdegen, M. and Schimpf, K. and Muttersbach, J. and Lehmann, R. and Marso, M. and Kordos, P. (1996) InP-based monolithically integrated photoreceiver for 4-10GBit/S optoelectronic systems. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

España Boquera, M.C. and Puerta Notario, A. (1996) Injection locked laser modelling in presence of noise. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Liu, Wen-Chau and Tsai, Jung-Hui and Thei, Kong-Beng and Lin, Kun-Wei and Cheng, C. C. and Chen, H. R. (1996) Investigation of InGaP/GaAs multiple negative-differential-resistance (NDR) device prepared by MOCVD. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ahdjoudj, Mourad and Boudiaf, Ali and Pouvil, Pierre (1996) K-band monolothic VCO using PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Villa, S. and Lacaita, A. L. and Di Carlo, A. and Lugli, P. (1996) Light emission from direct and phonon-assisted processes in AlGaAs/GaAs HBT's. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Quere, R. and Ngoya, E. and Mons, S. and Rousset, J. and Camiade, M. and Obregon, J. (1996) Linear and nonlinear stability analysis of MMICs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Aniel, F. and Lepaul, S. and Peymayeche, L. and De Lustrac, A. and Bouillault, F. and Adde, R. (1996) Local self-heating in short gate GaAs PHEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

van den Bogaart, F.L.M. and de Hek, A.P. and de Boer, A. (1996) MESFET high-power high-efficiency MMIC amplifiers at X-band with 30% bandwidth. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Dueme, Ph. and Nicole, P. and Schaller, M. and Bois, J.R. (1996) MMIC GaAs transimpedance amplifiers for optoelectronic applications. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Cazaux, Jean-Louis and Pouysegur, Michel and Orsini, Maurice and Rivierre, Bernard and Soulard, Michel and Floury, Gerard (1996) MMIC's are now effective in space programs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Portilla, J. and de la Fuente, M.L. and Artal, E. (1996) MMICs for K band low noise receivers. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Wang, S. M. and Karlsson, C. and Rorsman, N. and Bergh, M. and Olsson, E. and Andersson, T. G. and Zirath, H. (1996) Material characterization and device performance of In0.7Al0.3As/InAs/In0.8Ga0.2As HFET structures fabricated on GaAs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Beaumont-Smith, Andrew and Burgess, Neil (1996) Modified Kogge-Stone VLSI adder architecture for GaAs technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Fumi, F. and Lanzieri, C. and Lupano, D. and Negri, G. and Peroni, M. and Cetronio, A. (1996) Multi-function self-aligned gate (MSAG) process for low cost, increased performance GaAs integrated circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Delmond, M. and Billonnet, L. and Jarry, B. and Guillon, P. (1996) Multicellular high-order active recursive filter using MMIC technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Gasmi, A. and Huyart, B. and Bergeault, E. and Jallet, L. (1996) Narrow band quasi-circulator module design used in a transmit / receive module. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Asmontas, S. and Gradauskas, J. and Seliuta, D. and Silenas, A. and Sirmulis, E. (1996) New GaAs infrared detector. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Danneville, F. and Cappy, A. (1996) Noise modelling of devices under nonlinear operation. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Stephan, R. and Möhring, J. (1996) Practical investigations on monolithic integrated microwave filters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Nava, F. and Vanni, P. and Canali, C. and Cavallini, A. and Chiossi, C. and Bertuccio, G. and Pullia, A. and Lanzieri, C. (1996) SI LEC GaAs nuclear detectors: characterization, performance and applications. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Bartolucci, Giancarlo and Pini, Fabrizio and Marcelli, Romolo and Dragoman, M. and Simion, Stefan (1996) Second harmonic generation by means of double tapered non-linear transmission line. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Dhondt, F. and Rolland, P.A. and Haese, N. and Delage, S. L. and Blanck, H. and Chartier, E. (1996) Self consistent electrothermal modeling of multifingers HBTs for power application. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Abbott, Derek and Eshraghian, Kamran (1996) SiGe versus GaAs - is there a challenge? In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Abdipour, A. and Pacaud, A. (1996) Signal and noise properties of TWFETs (model, concept, and potential). In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Filoche, M. (1996) Simulation in optoelectronics : state of the art and trends. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ngoya, E. and Larcheveque, R. (1996) Simulation of microwave communication circuits and systems by envelop and compressed transient methods. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Salmer, G. and De Jaeger, J.C. and Langrez, D. and Kolanowski, C. and Duhamel, F. (1996) Specific methodology for the design of new monolithic millimeter wave integrated circuits. Combination of several simulation and modeling tools. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Boudiaf, Ali and Scavennec, Andre (1996) Temperature dependence of PHEMT noise parameters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Denisenko, V.L. (1996) The anisotropy of the in-plane dispersion relations of the hole subbands of GaAs-GaAlAs quantum well. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Turner, Jim (1996) The competitiveness of european GaAs foundries. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Morthier, G. and Baets, R. (1996) Trends in modelling of single frequency laser diodes. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Balatchev, S. and Gautier, J.L. and Delacressonniere, B. (1996) Using a negative conductance for optimizing the resistive mixers conversion losses. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Poplavko, Y.M. and Pereverzeva, L.P. (1996) Volumetric piezoelectric effect and artificial pyroelectricity in GaAs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Decaesteke, Th. and Villard, M.J and Bois, J.R. and Laforge, E. and Chaubet, M. and Huguet, P. (1996) X-band high PAE MMIC HPA for space radar applications. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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