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Numero di documenti: 86.

Lee, M. ; Kim, Y. M. (1996) 10 GHz ultra-high speed GaAs decision circuit design. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Demange, D. ; Billard, M. ; Lefevre, R. (1996) 20 Gb/s electroabsorption modulator drivers based on 0.2 um GaAs PHEMT. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Lopez, J.F. ; Sarmiento, R. ; Nunez, A. ; Eshraghian, K. (1996) A 2ns/660mW GaAs 5Kbit ROM using low leakage current FET circuit (L2FC). In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ghione, G. ; Goano, M. ; Naldi, C. U. (1996) A CAD-oriented model for the ohmic losses of multiconductor coplanar lines in hybrid and monolithic MIC's. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Beaurin, O. ; Royannez, P. ; Amara, A. ; Chaput, J.P. (1996) A GaAs data-path compiler. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Mehnert, Andrew ; Burgess, Neil ; Eshraghian, K. ; Kuczborski, Wojciech ; Sarmiento, Roberto (1996) A GaAs video rate morphological processor for image coding and compression. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Pillan, Margherita ; Salice, Fabio ; Ghione, Giovanni (1996) A constraint generation tool for the design of high frequency integrated circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Alonso, Jose I. ; Lopez, Ernesto J. ; Mahfoudi, Mustapha (1996) A design technique for GaAs MMIC differential amplifiers based on physical parameters of the foundry. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Bressan, M. ; Conciauro, G. ; Gamba, P. (1996) A fast EM simulator for the wideband analysis of multiconductor buses for MMIC's and high-speed digital circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Baeyens, Y. ; Schreurs, D. ; Nauwelaers, B. ; Van der Zanden, K. ; Van Hove, M. ; De Raedt, W. ; Van Rossum, M. (1996) A high-gain coplanar GaAs PHEMT K-band dual-gate amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ribas, R.P. ; Bernal, A. ; Guyot, A. (1996) A low-power differential cross-coupled FET logic for GaAs asynchronous design. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Valkov, S. ; Derzkii, D. ; Temcamani, F. ; Pouvil, P. (1996) A new auto-coherent bias dependent charge model for MESFETs and HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Giannini, Franco ; Limiti, Ernesto ; Orengo, Giancarlo (1996) A novel single-bias ultra-wideband monolithic pulse amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Tieman, T.C.B. ; van Vliet, F.E. ; van den Bogaart, F.L.M. ; Tauritz, J.L. (1996) A tuneable GaAs MMIC band stop filter at X-band with a novel active inductor. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Le Normand, Jean-Pierre ; Alain Perichon, Robert (1996) An active microwave transmission delay equalizer. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Bonani, F. ; Donati, S. ; Ghione, G. ; Pirola, M. ; Naldi, C.U. (1996) An efficient physics-based CAD approach to evaluate the sensitivity of GaAs devices with respect to process parameters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Plana, R. ; Parra, T. ; Zanchi, C. ; Dienot, J.M. ; Gayral, M. ; Villard, M.J. ; Martin, J.C. ; Tizien, P.G. ; Graffeuil, J. (1996) An exhaustive non-linear modelling of GaInP/GaAs HBT's - Application to a low phase noise Ku band VCO. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Lu, Ke ; Snowden, Christopher M. ; Pollard, Roger D. (1996) Analysis of collapse patterns in multi-finger power AlGaAs/GaAs HBTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Gaquiere, C. ; Bonte, B. ; Piotrowicz, S. ; Bourcier, E. ; Crosnier, Y. (1996) Analysis of extrinsic element influence on the power performances of HEMT's in the Ka-band. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Guillouard, K. ; Wong, M.F. ; Fouad Hanna, V. ; Citerne, J. (1996) Analysis of lossy transmission lines for GaAs MMIC technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ajram, S. ; Kozlowski, Romain ; Van de Velde, Jean Claude ; Salmer, Georges (1996) Application of GaAs power devices to very - high - frequency and high - efficiency DC to DC power converters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Giorgio, A. ; Perri, A. G. ; Castagnolo, B. (1996) Automatic design of GaAs MESFETs for thermal effect optimization. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Colquhoun, A. ; Meinel, Holger (1996) Automotive applications of GaAs components. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Lour, Wen-Shiung ; Tsai, Jung-Hui ; Liu, Wen-Chau ; Chen, H. R. (1996) Characteristics of InGaP/GaAs single- heterojunction bipolar transistor with zero potential-spike by δ-doped sheet. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Aniel, F. ; Sylvestre, A. ; Jin, Y. ; Crozat, P. ; de Lustrac, A. ; Vernet, G. ; Adde, R. (1996) Comparative evolutions of short gate InGaAs channel HEMTs on InP and GaAs at cryogenic temperatures. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Meneghesso, Gaudenzio ; Paccagnella, Alessandro ; Haddab, Youcef ; Canali, C. ; Zanoni, Enrico (1996) Correlation between permanent degradation of GaAs-based HEMT´s and current DLTS spectra. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Abbott, Derek ; Eshraghian, K. (1996) Current gain mechanism in planar GaAs MESFETs due to new photovoltaic self-biasing edge-effect. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Vashchenko, V.A. ; Martynov, J.B. ; Sinkevitch, V.F. ; Tager, A.S. (1996) Current instability and burnout under MESFET gate breakdown. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Pascual, J.P. ; Portilla, J. ; Artal, E. (1996) Design approaches for oscillators in low microwave bands. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Laporte, E. ; Maurin, P. ; Nallatamby, J. C. ; Reffet, D. ; Prigent, M. ; Obregon, J. (1996) Design of state of art low noise VCO using MMIC negative resistance modules. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ndagijimana, Fabien ; Chilo, Jean (1996) Design of very high performance packages for microwave GaAs IC's. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Legros, E. ; Merrar, A. ; Billard, M. ; Joly, C. ; Blanconnier, P. (1996) Distributed GaAs-PHEMT 0.2um preamplifier for 20 Gbit/s photoreceivers. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Langrez, D. ; Diette, F. ; Theron, D. ; Delos, E. ; Salmer, G. (1996) Dual gate pseudomorphic HEMT for low noise amplification in millimeter wave range. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Brazil, Thomas J. (1996) EDGE: Europe's new ESPRIT project in high-frequency CAD. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Desrousseaux, P. ; Konczykowska, Agnieszka (1996) Efficient method for the design of high-speed bipolar decision circuit. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Golshani, A. ; Hainberger, R. ; Freisleben, S. ; Kock, A. ; Gornik, E. ; Gmachl, C. ; Korte, L. (1996) Efficient surface emitting AlGaAs/GaAs laser diodes based on first-order-grating-coupled surface mode emission. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Sylvestre, A. ; Aniel, F. ; Boucaud, P. ; Julien, F.H. ; Jin, Y. ; Crozat, P. ; de Lustrac, A. ; Adde, R. (1996) Electroluminescence study of "on" and "off state breakdown in InP based HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Poplavko, Y.M. ; Moskalyuk, V.A. ; Timofeyev, A.I. ; Prokopenko, Y.V. ; Pereverzeva, L.P. (1996) Feasibility of one-crystal GaAs artificial pyroelectric array. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Vashchenko, V.A. ; Martynov, J.B. ; Sinkevitch, V.F. ; Tager, A. S. (1996) Formation and evolution of spatial dissipate structures in GaAs n-i-n structures. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Devlin, L. ; Buck, B. J. ; Clifton, J. C. ; Dearn, A.W. ; Geen, M. W. ; Long, A. P. ; Melvin, S. P. (1996) GaAs application specific MMICs for a HIPERLAN MCM. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Morales, J. ; Suarez, A. ; Sarkissian, J. C. ; Quere, R. (1996) Global stability analysis of a broadband MMIC frequency divider in millimetric band. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Jay, Paul R. (1996) Good things come in small (high speed) packages. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Larciprete, N. ; Loriga, F. ; Marietti, P. ; Trifiletti, A. (1996) High CMRR GaAs single-input to differential convertor. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Camiade, M. ; Dourlens, C. ; Serru, V. ; Savary, P. ; Blanc, J.C (1996) High performance MMICs for automotive radar application at 77 GHz. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Cocco, V. ; Marietti, P. ; Trifiletti, A. (1996) High yield design of MMIC transimpedance amplifiers for multigigabit optical transmission systems. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Kosov, A.S. ; Vald-Perlov, V.M. ; Zotov, V.A. (1996) High-efficiency powerful millimeter wave varactor multiplier. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Liu, W. C. ; Laih, L. W. ; Wu, C. Z. ; Cheng, C. C. ; Lin, K. W. ; Chen, H. R. (1996) High-performance of InGaAs/GaAs doped-channel heterostructure field-effect transistor (HFET) prepared by MOCVD. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Cabon, B. ; Hilt, A. ; Vilcot, A. ; Czotscher, K. ; Weisser, S. ; Berceli, T. (1996) Hybrid integration of laser diode chips on a glass substrate. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Fawaz, Hussein ; Thiery, Jean-Francois ; Linh, Nuyen ; Mollot, Francis ; Pesant, Jean-Claude ; Francois, Marc ; Muller, Michel ; Delos, E. ; Salmer, Georges (1996) III-V complementary HIGFET technology for low power microwave and high speed/low power digital integrated circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Esper-Chain, R ; Lassen, P.S. ; Lopez, J.F. ; Sarmiento, R. (1996) Implementation of a 2.5Gb/s ATM transceiver in GaAs technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Laneve, T. ; Do-Ky, H. ; Watson, P. ; Stubbs, M. G. (1996) Implementation of a large-signal HBT model in Libra. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Scavennec, Andre (1996) InP microelectronics reaching maturity. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Horstmann, M. ; Hardtdegen, M. ; Schimpf, K. ; Muttersbach, J. ; Lehmann, R. ; Marso, M. ; Kordos, P. (1996) InP-based monolithically integrated photoreceiver for 4-10GBit/S optoelectronic systems. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

España Boquera, M.C. ; Puerta Notario, A. (1996) Injection locked laser modelling in presence of noise. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Liu, Wen-Chau ; Tsai, Jung-Hui ; Thei, Kong-Beng ; Lin, Kun-Wei ; Cheng, C. C. ; Chen, H. R. (1996) Investigation of InGaP/GaAs multiple negative-differential-resistance (NDR) device prepared by MOCVD. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ahdjoudj, Mourad ; Boudiaf, Ali ; Pouvil, Pierre (1996) K-band monolothic VCO using PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Villa, S. ; Lacaita, A. L. ; Di Carlo, A. ; Lugli, P. (1996) Light emission from direct and phonon-assisted processes in AlGaAs/GaAs HBT's. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Quere, R. ; Ngoya, E. ; Mons, S. ; Rousset, J. ; Camiade, M. ; Obregon, J. (1996) Linear and nonlinear stability analysis of MMICs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Aniel, F. ; Lepaul, S. ; Peymayeche, L. ; De Lustrac, A. ; Bouillault, F. ; Adde, R. (1996) Local self-heating in short gate GaAs PHEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

van den Bogaart, F.L.M. ; de Hek, A.P. ; de Boer, A. (1996) MESFET high-power high-efficiency MMIC amplifiers at X-band with 30% bandwidth. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Dueme, Ph. ; Nicole, P. ; Schaller, M. ; Bois, J.R. (1996) MMIC GaAs transimpedance amplifiers for optoelectronic applications. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Cazaux, Jean-Louis ; Pouysegur, Michel ; Orsini, Maurice ; Rivierre, Bernard ; Soulard, Michel ; Floury, Gerard (1996) MMIC's are now effective in space programs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Portilla, J. ; de la Fuente, M.L. ; Artal, E. (1996) MMICs for K band low noise receivers. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Wang, S. M. ; Karlsson, C. ; Rorsman, N. ; Bergh, M. ; Olsson, E. ; Andersson, T. G. ; Zirath, H. (1996) Material characterization and device performance of In0.7Al0.3As/InAs/In0.8Ga0.2As HFET structures fabricated on GaAs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Beaumont-Smith, Andrew ; Burgess, Neil (1996) Modified Kogge-Stone VLSI adder architecture for GaAs technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Fumi, F. ; Lanzieri, C. ; Lupano, D. ; Negri, G. ; Peroni, M. ; Cetronio, A. (1996) Multi-function self-aligned gate (MSAG) process for low cost, increased performance GaAs integrated circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Delmond, M. ; Billonnet, L. ; Jarry, B. ; Guillon, P. (1996) Multicellular high-order active recursive filter using MMIC technology. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Gasmi, A. ; Huyart, B. ; Bergeault, E. ; Jallet, L. (1996) Narrow band quasi-circulator module design used in a transmit / receive module. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Asmontas, S. ; Gradauskas, J. ; Seliuta, D. ; Silenas, A. ; Sirmulis, E. (1996) New GaAs infrared detector. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Danneville, F. ; Cappy, A. (1996) Noise modelling of devices under nonlinear operation. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Stephan, R. ; Möhring, J. (1996) Practical investigations on monolithic integrated microwave filters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Nava, F. ; Vanni, P. ; Canali, C. ; Cavallini, A. ; Chiossi, C. ; Bertuccio, G. ; Pullia, A. ; Lanzieri, C. (1996) SI LEC GaAs nuclear detectors: characterization, performance and applications. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Bartolucci, Giancarlo ; Pini, Fabrizio ; Marcelli, Romolo ; Dragoman, M. ; Simion, Stefan (1996) Second harmonic generation by means of double tapered non-linear transmission line. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Dhondt, F. ; Rolland, P.A. ; Haese, N. ; Delage, S. L. ; Blanck, H. ; Chartier, E. (1996) Self consistent electrothermal modeling of multifingers HBTs for power application. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Abbott, Derek ; Eshraghian, Kamran (1996) SiGe versus GaAs - is there a challenge? In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Abdipour, A. ; Pacaud, A. (1996) Signal and noise properties of TWFETs (model, concept, and potential). In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Filoche, M. (1996) Simulation in optoelectronics : state of the art and trends. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Ngoya, E. ; Larcheveque, R. (1996) Simulation of microwave communication circuits and systems by envelop and compressed transient methods. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Salmer, G. ; De Jaeger, J.C. ; Langrez, D. ; Kolanowski, C. ; Duhamel, F. (1996) Specific methodology for the design of new monolithic millimeter wave integrated circuits. Combination of several simulation and modeling tools. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Boudiaf, Ali ; Scavennec, Andre (1996) Temperature dependence of PHEMT noise parameters. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Denisenko, V.L. (1996) The anisotropy of the in-plane dispersion relations of the hole subbands of GaAs-GaAlAs quantum well. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Turner, Jim (1996) The competitiveness of european GaAs foundries. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Morthier, G. ; Baets, R. (1996) Trends in modelling of single frequency laser diodes. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Balatchev, S. ; Gautier, J.L. ; Delacressonniere, B. (1996) Using a negative conductance for optimizing the resistive mixers conversion losses. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Poplavko, Y.M. ; Pereverzeva, L.P. (1996) Volumetric piezoelectric effect and artificial pyroelectricity in GaAs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

Decaesteke, Th. ; Villard, M.J ; Bois, J.R. ; Laforge, E. ; Chaubet, M. ; Huguet, P. (1996) X-band high PAE MMIC HPA for space radar applications. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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