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Number of documents:99.

Darbandi, A. and Buret, H. and Michard, F. and Zoyo, M. (1999) 25W L-band power module for space applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kauffmann, N. and Andre, P. and Burie, J.R. and Duchenois, A. M. and Riet, M. and Konczykowska, A. (1999) 44 Gb/s InP DHBT MUX-Driver IC for external laser modulation. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Werthof, A. and Grave, T. and Kellner, W. (1999) 90 GHz amplifier fabricated by a low cost PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Hoel, Virginie and Boret, Samuel and Grimbert, Bertrand and Aperce, Gilles and Bollaert, S. and Happy, Henri and Wallart, Xavier and Cappy, A. (1999) 94-GHz low noise amplifier on InP in coplanar technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Chang, E. Y. and Lee, Di-Houng and Lai, Yeong-Lin and Chen, S.H. (1999) A 2.4-V 30-dBm 61.5%-efficiency power PHEMT for wireless communications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bué, F. and Gaquiere, C. and Crosnier, Y. and Carnez, B. and Quentin, P. (1999) A 26-40 GHz on wafer intermodulation measurement system. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

de Hek, A.P. and Hunneman, P.A.H. and Demmler, M. and Hülsmann, A. (1999) A compact broadband high efficient X-Band 9-Watt PHEMT MMIC high-power amplifier for phased array radar applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rasa, F. and Remonti, M. (1999) A large-band 2.8-4.25 / 5.6-8.5 GHz frequency doubler MMIC for digital radio link applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rodríguez Tellez, J. and Mediavilla, A. and Fernández, T. and Tazón, A. (1999) A method for characterising frequency dispersion and thermal effects independently in GaAs FETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bobbo, B. M. and Giorgio, A. and Passaro, V. M. N. and Perri, A. G. and Pesare, M. (1999) A new 2-D GaAs MESFETs model based on a very accurate velocity - field expression. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Laloue, A. and Mallet-Guy, B. and Mons, S. and Laporte, E. and Quéré, R. and Soulard, M. (1999) A new approach of the linear and non linear stability analysis of PHEMT based on a finger-distributed generic non linear model and electromagnetic deembedding. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Nawaz, M. and Persson, S. H. M. and Zirath, H. and Choumas, E. and Mellberg, A. and Kollberg, E. L. (1999) A new reliable fabrication-process for InP based HEMTs and MMICs with gate length from 0.06 to 0.2 um. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Cidronali, A. and Santarelli, Alberto and Collodi, G. (1999) A novel approach to scalability for distributed FET models. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Frank, B.M. and Freundorfer, A.P. and Antar, Yahia M.M. (1999) A novel common gate mixer for wireless applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Klaassen, Andreas and Reber, Rolf and Ludwig, Michael (1999) A precision T/R module for X-Band SAR applications with a transmit chain in HBT-Technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Davies, I. and Phillips, W.A. and Humpston, G. and Niman, M.J. (1999) A review of flip-chip GaAs circuits, models, interconnections and modelling techniques in use at Marconi. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Giannini, Franco and Limiti, Ernesto and Orengo, Giancarlo and Scucchia, Lucio (1999) A systematic approach to microwave amplifier broadband matching. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Pesare, M. and Giorgio, A. and Passaro, V. M. N. and Perri, A. G. (1999) A two-dimensional electrothermal model for GaAs MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Colantonio, P. and Giannini, Franco and Leuzzi, Giorgio and Limiti, Ernesto (1999) A unified approach to high efficiency microwave power amplifier design. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Zolper, J. C. (1999) AlGaInN power transistors: status and prospects. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Adesida, I. and Ping, A. T. and Redwing, J. (1999) AlGaN/GaN heterostructure field-effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Wang, K. L. (1999) AlGaN/GaN on SiC HFETs for microwave power amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Zirath, Herbert and Landen, Lars and Fager, Christian (1999) An active millimeter wave MMIC frequency doubler with high spectral purity and low power consumption. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

de la Fuente, M.L. and Pascual, J. P. and Gonzalez, F. J. and Artal, E. (1999) Broadband GaAs MMIC downconverter with very low intermodulation for TV applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Lee, Thomas H. (1999) CMOS RF integrated circuits: past, present and future (invited). In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rao, Rapeta V.V.V.J. and Chong, T.C. and Tan, L.S. and Lau, W.S. and Alphones, Arokiaswami (1999) Change of gm(f) in LT-GaAs and LT-Al0.3Ga0.7As MISFETs with thermal stress. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Suárez, Almudena and Sancho, Sergio (1999) Chaos in Si MMIC oscillators. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ghione, G. and Goano, M and Omegna, G. and Pirola, M. and Bosso, S. and Frassati, D, and Perasso, A. (1999) Characterization and optimization of CPW electro-optic modulators for microwave and MM-wave applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Goel, Ashok and Bergstrom, Sarah and Mojica-Campbell, Aleli (1999) Computer simulation of GaAs and SOI devices using TCAD tools: an REU project. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Horio, K. and Wakabayashi, A. (1999) Computer-aided analysis of surface-state effects on kink phenomena in GaAs MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Makihara, Chihiro and Yoshida, Katsuyuki (1999) Development of millimeter-wave package for consumer market. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Gebara, Edward and Heo, Deukhyoun and Laskar, Joy and Harris, Mike (1999) Development of temperature dependent load-pull analysis techniques. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Beilenhoff, K. (1999) Device models for (M)MIC circuit design - benefits and limitations. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Tsai, Huan-Shang and Roux, Pascal and Giguet, Jean Louis and Chen, Young-Kai (1999) Dual-function MMIC for microwave digital radio. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Sim, Steven K. H. and Mutamba, Kabula and Herbert Li, E. (1999) Dual-wavelength of 1.3um and 1.55um AlGaSb/GaSb asymmetric quantum-well laser. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Filicori, Fabio and Santarelli, Alberto and Traverso, Pierandrea and Vannini, Giorgio (1999) Electron device model based on nonlinear discrete convolution for large-signal circuit analysis using commercial CAD packages. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Sozzi, G. and Dieci, D. and Menozzi, R. and Lanzieri, C. and Tomasi, T. and Canali, C. (1999) Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Sleiman, A. and Rossi, L. and Di Carlo, A. and Tocca, L. and Bonfiglio, A. and Brunori, M. and Lugli, P. and Zandler, G and Meneghesso, G. and Zanoni, E. and Canali, C. and Cetronio, A. and Lanzieri, M. and Peroni, M. (1999) Experimental and theoretical studies of near-breakdown phenomena in GaAs-based heterostructure FETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Gottwald, Frank (1999) Extended noise theory of GaAs-schottky-diodes. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ladbrooke, P.H. (1999) FET physics-based, MMIC yield analysis CAD tools and capabilities demonstrated within the EDGE project. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Drevon, C. and Cazaux, Jean-Louis (1999) From full hybrid to 3D microwave packaging for space applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Torres, Jorge Alves and Freire, J. Costa (1999) GaAs MMIC switches for PCs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rocchi, Marc (1999) GaAs custom MMIC foundry service : a business view. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Achouche, M. and Kraus, S. and Spitzbart, T. and Hähle, S. and John, W. and Mai, M. and Rentner, D. and Wolter, P. and Wittrich, H. and Bergunde, T. and Brunner, F. and Kurpas, P. and Richter, E. and Weyers, M. and Würfl, J. and Tränkle, G. (1999) GaAs microwave power HBTs for mobile communications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Cheskis, D. and Huang, C. (1999) GaAs optoelectronic integrated circuits for gigabit ethernet. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Vendier, O. and Coello Vera, A. and Blanck, H. and Pons, D. and Floriot, D. and Delage, S. L. and De Ceuninck, W. and Tielemans, L. and Rolland, P. A. (1999) HBT technology and reliability for satellite applications, within the relatively new APOS project. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Acciari, G. and Giannini, F. and Leuzzi, G. (1999) Harmonic solution of semiconductor transport equations for microwave and millimetre-wave device modelling. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Delage, S. L. (1999) Hero's project as an example of european programme on RF device improvement. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Poledrelli, C. and Betti-Berutto, A. and Khandavalli, C. and Satoh, T and Igarashi, T. and Kuroda, S. and Fukaya, J. (1999) High efficiency 1.4 W power amplifier for K-Band satellite communication system. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Hue, X. and Boudart, B. and Bonte, B. and Crosnier, Y. (1999) High linearity of double channel GaAs pHEMT using a very high selective wet etching. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Zhuravlev, K.S. and Toropov, A.I. and Shamirzaev, T.S. and Bakarov, A.K. and Rakov, Yu.N. and Myakishev, Yu. B. (1999) High purity AlGaAs grown by molecular beam epitaxy. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kohn, E. and Daumiller, I. (1999) High temperature performance of gan-based HFET's. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ageeva, N. N. and Bronevoi, I. L. and Kalafati, Yu. D. and Krivonosov, A. N. (1999) High-speed optoelectronic effects arising under intensive picosecond stimulated emission in GaAs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Higgins, J. Aiden (1999) III-V technologies: a growth industry for the 21st century. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bertone, D. (1999) In-situ etching technique, inside MOCVD reactor, for fabrication of III-V optoelectronic devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Alekseev, Egor and Eisenbach, Andreas and Pavlidis, Dimitris (1999) Interface properties and electrical characteristics of III-V nitride-based MISFETS. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Comparini, M. and Feudale, M. and Ranieri, P. and Suriani, A. and Gatti, G. and Auxemery, P. (1999) KA band satellite equipment using european GaAs technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Recly, Agnes and Tronche, Christian and Cazaux, Jean-Louis and Ducrocq, Jean-Bernard (1999) Ka-Band down converter and up converter in MCM-C technology for future telecommunication equipment. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Otoki, Y. and Kamogawa, H. and Ohnishi, M. and Inada, T. and Kashiwa, M. and Sakaguchi, H. (1999) Large volume production of large size GaAs substrates and epitaxial wafers for microwave devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Eckert, G. and Engelhardt, E. and Eiermann, F. (1999) Light-weight, temperature compensated T/R modules for active phased array radar applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ivaschuk, A. and Koval´chuk, V. and Bosyi, V. and Seidel, P. and Scherbel, J. and Poplavko, Y. (1999) Low temperature properties of GaAs MESFET. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Marques, M. G. and Tam, K. W. and Caldinhas Vaz, J. and Costa Freire, J. (1999) MMIC lumped and transversal filter with LC tuned amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Heuken, M. and Juergensen, H. (1999) MOCVD production tool for high speed electronic devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bland, Stephen W. (1999) Materials for GaInP/GaAs HBT's performed within the GAMMA project. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ohata, Keiichi (1999) Millimeter-wave packaging and module technology developments in Japan. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kojucharow, K. and Kaluzni, H. and Sauer, M. and Schaffer, Ch. and Finger, A. (1999) Millimeter-wave wireless LAN based on simultaneous upconversion technique of optical WDM channels. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Camiade, M. and Brandeau, J.P. and Domnesque, D. (1999) Mm-wave front-end developed within the on-going AWARE/LOCOMOTIVE projects for automotive applications at 77GHz. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rao, Rapeta V.V.V.J. and Chong, T.C. and Tan, L.S. and Lau, W.S. and Liou, JJ. (1999) Modeling of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Dobes, Josef (1999) Modeling the GaAs nonlinear microwave circuits using the CIA program. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Frounchi, Javad and Harrold, Steve J. (1999) Multigigabit programmable comb decimator implemented in GaAs/AlGaAs HEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Tiginyanu, I.M. and Hartnagel, H.L. (1999) Nanoporous membranes and heterostructures on III-V compounds for micro- and optoelectronic applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Teyssier, J.P. and Barataud, D. and Laloue, A. and Bouysse, Ph. and Quere, R (1999) Nonlinear characterization of microwave transistors by the means of pulsed I(V) and pulsed S-Parameters measurements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Schreurs, Dominique (1999) Overview of non-linear device modelling methods based on vectorial large-signal measurements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Grajal de la Fuente, Jesus and Krozer, Viktor and Campo, Alfonso and SchüBler, Martin (1999) Performance limitations of power HBT devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Van vliet, F.E. and Stulemeijer, J. and Benoist, K.W. and Smit, M.K. (1999) Photonic integration for phased-array applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kasper, E. and Reitemann, G. (1999) Physics of future ultra high speed transistors - Part II: new concepts. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kasper, Erich and Eberhardt, Jochen (1999) Physics of future ultra high speed transistors - part 1: HBT. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

GUY, A. and GALY, C. and VILLEMAZET, J.F. and SAUTEREAU, J.F. and Cazaux, Jean-Louis (1999) Power amplifier linearization using cartesian feedback. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Betti-Berutto, A. and Satoh, T. and Khandavalli, Chandra and Giannini, Franco and Limiti, Ernesto (1999) Power amplifier second harmonic manipulation: mmWave application and test results. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Niman, Murray (1999) Precision wideband flip-chip modelling. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Boudart, B. and Trassaert, S. and Gaquiere, C. and Theron, D. and Crosnier, Y. (1999) Pulsed measurements of GaN MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Poplavko, Yuri and Ilchenko, Michael and Pereverzeva, Larissa and Prokopenko, Yuri and Ivaschuk, Anatoliy (1999) Pyroelectric-like response in semi-insulating III-V crystal. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ponchak, George E. (1999) RF transmission lines on silicon substrates. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Verspecht, Jan and Schreurs, Dominique (1999) Recent advances in the measurement and black-box modelling of high-frequency components. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ferrero, A. and Madonna, GianLuigi and Pisani, Umberto (1999) Recent technological advances for modular active harmonic load-pull measurement systems. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Pattison, L. and Wong, Y.L. and Linton, D. (1999) Scaleable coplanar waveguide transmission lines and discontinuities on gallium arsenide MMIC substrates. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rudolph, M. and Doerner, R. and Richter, E. and Heymann, P. (1999) Scaling of GaInP/GaAs HBT equivalent-circuit elements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Möller, M. and Rein, H.-M. and Gottwald, E. and Meister, T.F. (1999) SiGe bipolar ICs with data rates from 40 to 60 Gb/s for future fiber-optic systems. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Asif Khan, M. and Shur, M. S. and Gaska, R. (1999) Strain energy band engineering in AlGaInN/GaN heterostructure field effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Deyhimy, Ira and Tomasetta, Lou (1999) Technologies for Telecom & Datacom data transmissions. And the winner is: just plain mesfets. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Würfl, J. and Hilsenbeck, J. and Nebauer, E. and Trankle, G. and Obloh, H. (1999) Technology and thermal stability of ALGAN/GAN HFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Delage, S. L. and Cassette, S. and Poisson, M.-A.diForte and Floriot, D. and Chartier, E. and Etienne, P and Galtier, P. and Landesman Thomson, J.-P. (1999) The correlation between material properties and HBT reliability. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Gurusinghe, K. K. M. N. and Andersson, T. G. and Premaratne, K. (1999) The effect of the first barrier thickness on resonance tunnelling and carrier accumulation in undoped single quantum well infrared photodetectors. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Larson, Lawrence E. and de Vreede, Leo C.N. (1999) The impact of silicon technology on future microwave systems. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Jacobs, B. and Karouta, F. and Kwaspen, J.J.M. and Hageman, P.R. and Kaufmann, L.M.F. and Larsen, P.K. (1999) The processing and scalability of AlGaN/GaN HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Deborgies, F. and Lemoine, Thierry and Mancuso, Yves (1999) Three-dimensional packaging technologies for highly integrated T/R modules. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Gudmundson, Mikael (1999) WCDMA - The third generation radio access. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Landstorfer, F. M. (1999) Wave propagation models for the planning of mobile communication networks. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Zoyo, M. and Cartier, N. and Touchais, J.Y. and Maynadier, P. and Midan, E. and Sgard, P. and Buret, H. and Peschoud, M. (1999) X-band 22W SSPA for earth observation satellite. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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