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Numero di documenti: 99.

Darbandi, A. ; Buret, H. ; Michard, F. ; Zoyo, M. (1999) 25W L-band power module for space applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kauffmann, N. ; Andre, P. ; Burie, J.R. ; Duchenois, A. M. ; Riet, M. ; Konczykowska, A. (1999) 44 Gb/s InP DHBT MUX-Driver IC for external laser modulation. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Werthof, A. ; Grave, T. ; Kellner, W. (1999) 90 GHz amplifier fabricated by a low cost PHEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Hoel, Virginie ; Boret, Samuel ; Grimbert, Bertrand ; Aperce, Gilles ; Bollaert, S. ; Happy, Henri ; Wallart, Xavier ; Cappy, A. (1999) 94-GHz low noise amplifier on InP in coplanar technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Chang, E. Y. ; Lee, Di-Houng ; Lai, Yeong-Lin ; Chen, S.H. (1999) A 2.4-V 30-dBm 61.5%-efficiency power PHEMT for wireless communications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bué, F. ; Gaquiere, C. ; Crosnier, Y. ; Carnez, B. ; Quentin, P. (1999) A 26-40 GHz on wafer intermodulation measurement system. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

de Hek, A.P. ; Hunneman, P.A.H. ; Demmler, M. ; Hülsmann, A. (1999) A compact broadband high efficient X-Band 9-Watt PHEMT MMIC high-power amplifier for phased array radar applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rasa, F. ; Remonti, M. (1999) A large-band 2.8-4.25 / 5.6-8.5 GHz frequency doubler MMIC for digital radio link applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rodríguez Tellez, J. ; Mediavilla, A. ; Fernández, T. ; Tazón, A. (1999) A method for characterising frequency dispersion and thermal effects independently in GaAs FETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bobbo, B. M. ; Giorgio, A. ; Passaro, V. M. N. ; Perri, A. G. ; Pesare, M. (1999) A new 2-D GaAs MESFETs model based on a very accurate velocity - field expression. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Laloue, A. ; Mallet-Guy, B. ; Mons, S. ; Laporte, E. ; Quéré, R. ; Soulard, M. (1999) A new approach of the linear and non linear stability analysis of PHEMT based on a finger-distributed generic non linear model and electromagnetic deembedding. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Nawaz, M. ; Persson, S. H. M. ; Zirath, H. ; Choumas, E. ; Mellberg, A. ; Kollberg, E. L. (1999) A new reliable fabrication-process for InP based HEMTs and MMICs with gate length from 0.06 to 0.2 um. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Cidronali, A. ; Santarelli, Alberto ; Collodi, G. (1999) A novel approach to scalability for distributed FET models. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Frank, B.M. ; Freundorfer, A.P. ; Antar, Yahia M.M. (1999) A novel common gate mixer for wireless applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Klaassen, Andreas ; Reber, Rolf ; Ludwig, Michael (1999) A precision T/R module for X-Band SAR applications with a transmit chain in HBT-Technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Davies, I. ; Phillips, W.A. ; Humpston, G. ; Niman, M.J. (1999) A review of flip-chip GaAs circuits, models, interconnections and modelling techniques in use at Marconi. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Giannini, Franco ; Limiti, Ernesto ; Orengo, Giancarlo ; Scucchia, Lucio (1999) A systematic approach to microwave amplifier broadband matching. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Pesare, M. ; Giorgio, A. ; Passaro, V. M. N. ; Perri, A. G. (1999) A two-dimensional electrothermal model for GaAs MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Colantonio, P. ; Giannini, Franco ; Leuzzi, Giorgio ; Limiti, Ernesto (1999) A unified approach to high efficiency microwave power amplifier design. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Zolper, J. C. (1999) AlGaInN power transistors: status and prospects. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Adesida, I. ; Ping, A. T. ; Redwing, J. (1999) AlGaN/GaN heterostructure field-effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Wang, K. L. (1999) AlGaN/GaN on SiC HFETs for microwave power amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Zirath, Herbert ; Landen, Lars ; Fager, Christian (1999) An active millimeter wave MMIC frequency doubler with high spectral purity and low power consumption. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

de la Fuente, M.L. ; Pascual, J. P. ; Gonzalez, F. J. ; Artal, E. (1999) Broadband GaAs MMIC downconverter with very low intermodulation for TV applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Lee, Thomas H. (1999) CMOS RF integrated circuits: past, present and future (invited). In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Alphones, Arokiaswami (1999) Change of gm(f) in LT-GaAs and LT-Al0.3Ga0.7As MISFETs with thermal stress. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Suárez, Almudena ; Sancho, Sergio (1999) Chaos in Si MMIC oscillators. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ghione, G. ; Goano, M ; Omegna, G. ; Pirola, M. ; Bosso, S. ; Frassati, D, ; Perasso, A. (1999) Characterization and optimization of CPW electro-optic modulators for microwave and MM-wave applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Goel, Ashok ; Bergstrom, Sarah ; Mojica-Campbell, Aleli (1999) Computer simulation of GaAs and SOI devices using TCAD tools: an REU project. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Horio, K. ; Wakabayashi, A. (1999) Computer-aided analysis of surface-state effects on kink phenomena in GaAs MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Makihara, Chihiro ; Yoshida, Katsuyuki (1999) Development of millimeter-wave package for consumer market. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Gebara, Edward ; Heo, Deukhyoun ; Laskar, Joy ; Harris, Mike (1999) Development of temperature dependent load-pull analysis techniques. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Beilenhoff, K. (1999) Device models for (M)MIC circuit design - benefits and limitations. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Tsai, Huan-Shang ; Roux, Pascal ; Giguet, Jean Louis ; Chen, Young-Kai (1999) Dual-function MMIC for microwave digital radio. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Sim, Steven K. H. ; Mutamba, Kabula ; Herbert Li, E. (1999) Dual-wavelength of 1.3um and 1.55um AlGaSb/GaSb asymmetric quantum-well laser. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Filicori, Fabio ; Santarelli, Alberto ; Traverso, Pierandrea ; Vannini, Giorgio (1999) Electron device model based on nonlinear discrete convolution for large-signal circuit analysis using commercial CAD packages. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Sozzi, G. ; Dieci, D. ; Menozzi, R. ; Lanzieri, C. ; Tomasi, T. ; Canali, C. (1999) Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Sleiman, A. ; Rossi, L. ; Di Carlo, A. ; Tocca, L. ; Bonfiglio, A. ; Brunori, M. ; Lugli, P. ; Zandler, G ; Meneghesso, G. ; Zanoni, E. ; Canali, C. ; Cetronio, A. ; Lanzieri, M. ; Peroni, M. (1999) Experimental and theoretical studies of near-breakdown phenomena in GaAs-based heterostructure FETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Gottwald, Frank (1999) Extended noise theory of GaAs-schottky-diodes. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ladbrooke, P.H. (1999) FET physics-based, MMIC yield analysis CAD tools and capabilities demonstrated within the EDGE project. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Drevon, C. ; Cazaux, Jean-Louis (1999) From full hybrid to 3D microwave packaging for space applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Torres, Jorge Alves ; Freire, J. Costa (1999) GaAs MMIC switches for PCs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rocchi, Marc (1999) GaAs custom MMIC foundry service : a business view. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Achouche, M. ; Kraus, S. ; Spitzbart, T. ; Hähle, S. ; John, W. ; Mai, M. ; Rentner, D. ; Wolter, P. ; Wittrich, H. ; Bergunde, T. ; Brunner, F. ; Kurpas, P. ; Richter, E. ; Weyers, M. ; Würfl, J. ; Tränkle, G. (1999) GaAs microwave power HBTs for mobile communications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Cheskis, D. ; Huang, C. (1999) GaAs optoelectronic integrated circuits for gigabit ethernet. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Vendier, O. ; Coello Vera, A. ; Blanck, H. ; Pons, D. ; Floriot, D. ; Delage, S. L. ; De Ceuninck, W. ; Tielemans, L. ; Rolland, P. A. (1999) HBT technology and reliability for satellite applications, within the relatively new APOS project. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Acciari, G. ; Giannini, F. ; Leuzzi, G. (1999) Harmonic solution of semiconductor transport equations for microwave and millimetre-wave device modelling. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Delage, S. L. (1999) Hero's project as an example of european programme on RF device improvement. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Poledrelli, C. ; Betti-Berutto, A. ; Khandavalli, C. ; Satoh, T ; Igarashi, T. ; Kuroda, S. ; Fukaya, J. (1999) High efficiency 1.4 W power amplifier for K-Band satellite communication system. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Hue, X. ; Boudart, B. ; Bonte, B. ; Crosnier, Y. (1999) High linearity of double channel GaAs pHEMT using a very high selective wet etching. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Zhuravlev, K.S. ; Toropov, A.I. ; Shamirzaev, T.S. ; Bakarov, A.K. ; Rakov, Yu.N. ; Myakishev, Yu. B. (1999) High purity AlGaAs grown by molecular beam epitaxy. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kohn, E. ; Daumiller, I. (1999) High temperature performance of gan-based HFET's. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ageeva, N. N. ; Bronevoi, I. L. ; Kalafati, Yu. D. ; Krivonosov, A. N. (1999) High-speed optoelectronic effects arising under intensive picosecond stimulated emission in GaAs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Higgins, J. Aiden (1999) III-V technologies: a growth industry for the 21st century. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bertone, D. (1999) In-situ etching technique, inside MOCVD reactor, for fabrication of III-V optoelectronic devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Alekseev, Egor ; Eisenbach, Andreas ; Pavlidis, Dimitris (1999) Interface properties and electrical characteristics of III-V nitride-based MISFETS. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Comparini, M. ; Feudale, M. ; Ranieri, P. ; Suriani, A. ; Gatti, G. ; Auxemery, P. (1999) KA band satellite equipment using european GaAs technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Recly, Agnes ; Tronche, Christian ; Cazaux, Jean-Louis ; Ducrocq, Jean-Bernard (1999) Ka-Band down converter and up converter in MCM-C technology for future telecommunication equipment. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Otoki, Y. ; Kamogawa, H. ; Ohnishi, M. ; Inada, T. ; Kashiwa, M. ; Sakaguchi, H. (1999) Large volume production of large size GaAs substrates and epitaxial wafers for microwave devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Eckert, G. ; Engelhardt, E. ; Eiermann, F. (1999) Light-weight, temperature compensated T/R modules for active phased array radar applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ivaschuk, A. ; Koval´chuk, V. ; Bosyi, V. ; Seidel, P. ; Scherbel, J. ; Poplavko, Y. (1999) Low temperature properties of GaAs MESFET. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Marques, M. G. ; Tam, K. W. ; Caldinhas Vaz, J. ; Costa Freire, J. (1999) MMIC lumped and transversal filter with LC tuned amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Heuken, M. ; Juergensen, H. (1999) MOCVD production tool for high speed electronic devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Bland, Stephen W. (1999) Materials for GaInP/GaAs HBT's performed within the GAMMA project. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ohata, Keiichi (1999) Millimeter-wave packaging and module technology developments in Japan. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kojucharow, K. ; Kaluzni, H. ; Sauer, M. ; Schaffer, Ch. ; Finger, A. (1999) Millimeter-wave wireless LAN based on simultaneous upconversion technique of optical WDM channels. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Camiade, M. ; Brandeau, J.P. ; Domnesque, D. (1999) Mm-wave front-end developed within the on-going AWARE/LOCOMOTIVE projects for automotive applications at 77GHz. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Liou, JJ. (1999) Modeling of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Dobes, Josef (1999) Modeling the GaAs nonlinear microwave circuits using the CIA program. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Frounchi, Javad ; Harrold, Steve J. (1999) Multigigabit programmable comb decimator implemented in GaAs/AlGaAs HEMT technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Tiginyanu, I.M. ; Hartnagel, H.L. (1999) Nanoporous membranes and heterostructures on III-V compounds for micro- and optoelectronic applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Teyssier, J.P. ; Barataud, D. ; Laloue, A. ; Bouysse, Ph. ; Quere, R (1999) Nonlinear characterization of microwave transistors by the means of pulsed I(V) and pulsed S-Parameters measurements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Schreurs, Dominique (1999) Overview of non-linear device modelling methods based on vectorial large-signal measurements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Grajal de la Fuente, Jesus ; Krozer, Viktor ; Campo, Alfonso ; SchüBler, Martin (1999) Performance limitations of power HBT devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Van vliet, F.E. ; Stulemeijer, J. ; Benoist, K.W. ; Smit, M.K. (1999) Photonic integration for phased-array applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kasper, E. ; Reitemann, G. (1999) Physics of future ultra high speed transistors - Part II: new concepts. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Kasper, Erich ; Eberhardt, Jochen (1999) Physics of future ultra high speed transistors - part 1: HBT. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

GUY, A. ; GALY, C. ; VILLEMAZET, J.F. ; SAUTEREAU, J.F. ; Cazaux, Jean-Louis (1999) Power amplifier linearization using cartesian feedback. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Betti-Berutto, A. ; Satoh, T. ; Khandavalli, Chandra ; Giannini, Franco ; Limiti, Ernesto (1999) Power amplifier second harmonic manipulation: mmWave application and test results. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Niman, Murray (1999) Precision wideband flip-chip modelling. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Boudart, B. ; Trassaert, S. ; Gaquiere, C. ; Theron, D. ; Crosnier, Y. (1999) Pulsed measurements of GaN MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Poplavko, Yuri ; Ilchenko, Michael ; Pereverzeva, Larissa ; Prokopenko, Yuri ; Ivaschuk, Anatoliy (1999) Pyroelectric-like response in semi-insulating III-V crystal. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ponchak, George E. (1999) RF transmission lines on silicon substrates. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Verspecht, Jan ; Schreurs, Dominique (1999) Recent advances in the measurement and black-box modelling of high-frequency components. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Ferrero, A. ; Madonna, GianLuigi ; Pisani, Umberto (1999) Recent technological advances for modular active harmonic load-pull measurement systems. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Pattison, L. ; Wong, Y.L. ; Linton, D. (1999) Scaleable coplanar waveguide transmission lines and discontinuities on gallium arsenide MMIC substrates. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Rudolph, M. ; Doerner, R. ; Richter, E. ; Heymann, P. (1999) Scaling of GaInP/GaAs HBT equivalent-circuit elements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Möller, M. ; Rein, H.-M. ; Gottwald, E. ; Meister, T.F. (1999) SiGe bipolar ICs with data rates from 40 to 60 Gb/s for future fiber-optic systems. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Asif Khan, M. ; Shur, M. S. ; Gaska, R. (1999) Strain energy band engineering in AlGaInN/GaN heterostructure field effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Deyhimy, Ira ; Tomasetta, Lou (1999) Technologies for Telecom & Datacom data transmissions. And the winner is: just plain mesfets. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Würfl, J. ; Hilsenbeck, J. ; Nebauer, E. ; Trankle, G. ; Obloh, H. (1999) Technology and thermal stability of ALGAN/GAN HFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Delage, S. L. ; Cassette, S. ; Poisson, M.-A.diForte ; Floriot, D. ; Chartier, E. ; Etienne, P ; Galtier, P. ; Landesman Thomson, J.-P. (1999) The correlation between material properties and HBT reliability. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Gurusinghe, K. K. M. N. ; Andersson, T. G. ; Premaratne, K. (1999) The effect of the first barrier thickness on resonance tunnelling and carrier accumulation in undoped single quantum well infrared photodetectors. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Larson, Lawrence E. ; de Vreede, Leo C.N. (1999) The impact of silicon technology on future microwave systems. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Jacobs, B. ; Karouta, F. ; Kwaspen, J.J.M. ; Hageman, P.R. ; Kaufmann, L.M.F. ; Larsen, P.K. (1999) The processing and scalability of AlGaN/GaN HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Deborgies, F. ; Lemoine, Thierry ; Mancuso, Yves (1999) Three-dimensional packaging technologies for highly integrated T/R modules. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Gudmundson, Mikael (1999) WCDMA - The third generation radio access. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Landstorfer, F. M. (1999) Wave propagation models for the planning of mobile communication networks. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Zoyo, M. ; Cartier, N. ; Touchais, J.Y. ; Maynadier, P. ; Midan, E. ; Sgard, P. ; Buret, H. ; Peschoud, M. (1999) X-band 22W SSPA for earth observation satellite. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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