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Darbandi, A. ; Zoyo, M. ; Touchais, J.Y. ; Lévèque, H. (2002) 25W C-BAND highly efficient on board hybrid amplifier. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Meng, Chin-Chun ; Wu, Tzung-Han ; Lu, Shey-Shi (2002) 28 dB Gain DC-6 GHz GaInP/GaAs HBT Wideband Amplifiers with and without Emitter Capacitive Peaking. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hoffmann, S. ; Ojha, J.R. ; Thiede, A. ; Leblanc, R. ; Wroblewski, B. (2002) 7 VPP Modulator-Driver for 40 Gbit/s Optical Communications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Avitabile, G. ; Chellini, B. ; Giannini, F. ; Limiti, E. (2002) A 18 GHz MMIC biquad active filter. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Virk, R.S. ; O'Neal, M. ; Camargo, E. ; Ragle, R. ; Notomi, S. ; Gentrup, M. ; Franzwa, E. ; Hicks, G. ; Fukugawara, T. (2002) A 43-Gbps Lithium Niobate Modulator Driver Module. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Miyaguchi, Kenichi ; Hieda, Morishige ; Tarui, Yukinobu ; Hatamoto, Mikio ; Kanaya, Koh ; Kasahara, Michiaki ; Takagi, Tadashi (2002) A 6-18 GHz 5-Bit Phase Shifter MMIC Using Series/Parallel LC Circuit. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Reveyrand, T. ; Mazière, C. ; Nébus, J. M. ; Quéré, R. ; Mallet, A. ; Lapierre, L. ; Sombrin, J. (2002) A Calibrated Time Domain Envelope Measurement System for the Behavioral Modeling of Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bös, Thomas A. ; Satoh, Tomio ; Kajii, Kiyoshi ; Camargo, E. ; Hasegawa, Yuichi (2002) A Converter MMIC with Integrated LO Amplifier and Doubler. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Di Paolo, F. ; Leuzzi, G. (2002) A Design approach for sub-harmonic generation or suppression in non-linear circuits. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cidronali, A. ; Collodi, G. ; Toccafondi, C. ; Cignani, R. ; Santarelli, A. ; Vannini, G. ; Filicori, F. (2002) A Distributed Approach for the Characterisation of Parasitic Networks in Electron Device Modelling. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Ramachandran, V. ; Joseph, A.J. ; Johnson, J. B. ; Gallagher, M. D. ; Brandt, P. O. ; Tilly, L. ; Greenberg, D.R. ; Ansley, W.E. ; Gogineni, U. ; Harame, D.L. ; Dunn, J.S. (2002) A Fully-Manufacturable 0.5mm SiGe BiCMOS Technology for Wireless Power Amplifier Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Giannini, F. ; Limiti, E. ; Orengo, G. ; Serino, A. ; De Dominicis, M. (2002) A High Gain-Bandwidth Product Distributed Transimpedance Amplifier IC for High-Speed Optical Transmission Using Low-Cost GaAs Technology. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cidronali, A. ; Collodi, G. ; Magrini, I. ; Manes, G. (2002) A Highly Linear Mixer For Zero-IF Bluetooth Receiver. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Masini, L. ; Golfarelli, A. ; Pozzoni, M. (2002) A Low Voltage 12-GHz Silicon-Germanium Static frequency divider with a Selectable Division Ratio. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bessemoulin, A. ; Quentin, P. ; Thomas, H. ; Geiger, D. (2002) A Miniaturized 0.5-Watt Q-band 0.25-µm GaAs PHEMT High Power Amplifier MMIC. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Kallfass, Ingmar ; Zeuner, Marco ; Konig, Ulf ; Schumacher, Hermann ; Brazil, Thomas J. (2002) A Model for SiGe MODFETs with Improved Large-Signal Quality and Frequency Range. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Siligaris, Alexandre ; Vanmackelberg, Matthieu ; Dambrine, G. ; Vellas, Nicolas ; Danneville, F. (2002) A New Empirical Non-linear Model for SOI MOSFET. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Centurelli, F. ; Di Martino, A. ; Marietti, P. ; Scotti, G. ; Tommasino, P. ; Trifiletti, A. (2002) A Non-Linear Statistical Model for GaAs FET Integrated Circuits. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Vorobiev, A. ; Deleniv, A. ; Talanov, V. ; Gevorgian, S. (2002) A Simple Parallel-Plate Resonator Technique for Microwave. Characterization of Thin Resistive Films. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Condon, Emer ; Brazil, Thomas J. (2002) A Simplified Non-Linear Physical Model for High Frequency FET’s. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Comparini, M. ; Di Pasquale, Andrea ; Feudale, Marziale ; Giorgio, Agostino ; Perri, Anna Gina (2002) A Technique to Design MMICs for Space Applications and High Production Yields. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Kwaspen, J.J.M. (2002) A Universal Test Set for DC and Pulsed I-V Characterization of Various Semiconductor Devices. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Buoli, Carlo ; Gadaleta, Vito Marco ; Turillo, Tommaso ; Zingirian, Alessandro (2002) A broadband microstrip to waveguide transition for FR4 multilayer PCBs up to 50 GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Paganelli, R. ; Santarelli, A. ; Zucchelli, G. ; Costantini, A. ; Vannini, G. ; Filicori, F. (2002) A computationally efficient approach for the design of RF power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cappelluti, F. ; Bertazzi, F. ; Ghione, G. (2002) A novel finite-difference time-domain approach to the self-consistent simulation of high-speed TW-EAMs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Jastrzebski, Adam K. (2002) A simple condition for maximum bandwidth of a chip packaged in an mm-wave waveguide. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Martín-Guerrero, T.M. ; Esteban-Marzo, J. ; Castillo-Vázquez, B. ; Camacho-Peñalosa, C. (2002) A single relaxation-time non-quasi-static model for monolithic MESFET devices. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cortese, P. ; Camiade, M. ; Domnesque, D. (2002) A tiny and fully integrated differential VCO for LMDS application. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Schreurs, D. ; Vandenberghe, S. ; Taher, H. ; Nauwelaers, B. (2002) ANN Model For SiGe HBTs Constructed From Time-Domain Large-Signal Measurements. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Joodaki, M. ; Kompa, G. ; Hillmer, H. ; Kassing, R. (2002) Advantages of the New Generation Quasi-Monolithic Integration Technology (QMIT). In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Song, Young-Jean ; Oh, In-Ju ; Seo, Kyu-Jae ; Jeong, Yong-Chae ; Kim, Chul-Dong (2002) Analog Controlled Adaptive Feedforward Amplifier for IMT-2000 Band. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Mitani, Y. ; Kasai, D. ; Horio, K. (2002) Analysis of Correlation between Breakdown Characteristics and Gate-Lag Phenomena in Narrowly-Recessed-Gate. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Dubuc, Nicolas ; Duvanaud, Claude ; Bouysse, Ph. (2002) Analysis of the Doherty technique and application to a 900MHz power amplifier. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Reedy, Ronald E. (2002) Application of UTSi® CMOS On Sapphire to RF and Mixed Signal Requirements in Advanced Space Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Abdulrahman, B. ; Baudoin, G. (2002) Applying Digital Predistortion To Power Amplifiers Used in Third Generation Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Acciari, G. ; Giannini, F. ; Limiti, E. ; Rossi, M. (2002) Baseband Predistortion Lineariser Using Direct Spline Computation. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Duême, Ph. ; Dequen, Th. ; Funck, R. ; Caillon, B. ; Guerbeur, G. (2002) Broadband Active Phase Shifter GaAs MMIC. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Andersson, Kristoffer ; Eriksson, Joakim ; Rorsman, Niklas ; Zirath, Herbert (2002) C-Band Resistive SiC-MESFET mixer. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Pagani, M. ; Argento, D. ; Bignamini, M. ; De Francesco, I. ; Frave, G. ; Meazza, A. ; Mornata, A, ; Palomba, F. (2002) Characterisation of PHEMT intermodulation behaviour for highly linear MMIC power amplifier design. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Ono, Naoko ; Sasaki, Fumio ; Arai, Kazuhiro ; Iseki, Yuji (2002) Characteristics of GaAs HEMTs with Flip-Chip Interconnections. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hu, Juntao ; Sun, Mike ; Ho, Wu-Jing ; Qin, Yue ; Li, Jiang ; Day, Ding (2002) Characterization and Modeling of InP DHBTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cignani, R. ; Costantini, A. ; Vannini, G. ; Filicori, F. ; Manfredi, L. (2002) Circuit Architectures for Low-Phase-Noise Oscillators. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nightingale, S.J. ; Philippakis, M. ; Lovis, M. (2002) Considerations in the Design of Electro-Optic Modulators and Drivers for 40 Gb/s and Beyond. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Schwörer, C. ; Tessmann, A. ; Leich, M. ; Leuther, A. ; Kudszus, S. ; Bessemoulin, A. ; Schlechtweg, M. (2002) Coplanar High Performance MMICs in MHEMT and PHEMT Technology for Applications up to 100 GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Centurelli, F. ; Luzzi, R. ; Scotti, G. ; Tommasino, P. ; Trifiletti, A. (2002) Design Centering and Yield Optimisation of MMIC’s with Off-Chip Digital Controllers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Giorgio, Agostino ; Perri, Anna Gina (2002) Design of Photonic Band-Gap Devices Using the Leaky Mode Propagation Method. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Camargo, E. ; Virk, R.S. ; Hajji, R. ; Parker, S. ; Ohnishi, H. (2002) Design of a Broadband Amplifier for High Speed Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Maya, M.C. ; Lazaro, A. ; Pradell, L. (2002) Determination of FET noise parameters from 50 Ω noise figure measurements using a distributed noise model. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Myslinski, M. ; Schreurs, D. ; Wiatr, W. (2002) Development and Verification of a Non-Linear Look-Up Table Model for RF Silicon BJTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Sugiyama, Hiroki ; Yokoyama, Haruki ; Watanabe, Kazuo ; Kobayashi, Takashi (2002) Diffusion behavior of delta-doped Si in InAlAs/InP heterostructures. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Meng, C. C. ; Peng, A. S. ; Wen, S. Y. ; Huang, G. W. (2002) Direct observation of Gain compression mechanisms in PHEMT by RF Gate and Drain Currents. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

van Wanum, M. ; van der Graaf, M.W. ; Hoogland, J.A.H. ; van Heijningen, M. (2002) Dual Transimpedance Amplifier for 43 Gbps applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cappelluti, F. ; Bonani, F. ; Donati Guerrieri, S. ; Ghione, G. ; Naldi, C.U. ; Pirola, M. (2002) Dynamic, self consistent electro-thermal simulation of power microwave devices including the effect of surface metallizations. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Wane, S. ; Bajon, D. ; Baudrand, H. ; Gamand, P. (2002) EM Analysis of Inhomogeneous Layers Stack from the Wave Concept. Reduction of Substrate Couplings in BiCMOS Technology. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Lutz, C.R. ; Deluca, P.M. ; Stevens, K.S. ; Landini, B.E. ; Welser, R.E. ; Welty, R.J. ; Asbeck, P.M. (2002) Enhancing the Device Performance of III-V Based Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Malbert, N. ; Labat, N. ; Lambert, B. ; Touboul, A. ; Pataut, G. (2002) Evidence of surface trap effects on pseudomorphic HEMT submitted to impact ionisation stresses. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Massiot, Michel (2002) Evolution of LTCC technology for industrial applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Saglam, M. ; Leo, E. ; Bozzi, M. ; Perregrini, L. ; Rodriguez-Gironés, M. ; Hartnagel, H.L. (2002) Fabrication, Testing, and Lumped Element Modeling of Planar Heterostructure Barrier Varactors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Manfrin, S.K. ; De Dominicis, M. ; Orengo, G. ; Giannini, F. ; Romero, M.A. (2002) Fast Tuning Electronically Switched 16 x 1 Channel Receiver For Packet-Switched WDM Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nuttinck, S. ; Pinel, S. ; Gebara, E. ; Laskar, J. ; Harris, M. ; Shealy, J.R. (2002) Floating-Body Effects in AlGaN/GaN Power HFETs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Singhal, S. ; Brown, J.D. ; Borges, R. ; Piner, E. ; Nagy, W. ; Vescan, A. (2002) Gallium Nitride on Silicon HEMTs for Wireless Infrastructure Applications, Thermal Design and Performance. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bollaert, S. ; Parenty, T. ; Wallart, X. ; Happy, H. ; Dambrine, G. ; Cappy, A. (2002) HEMT's Design for Applications beyond 100GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Comparini, M.C. ; Leone, C. ; Montanucci, P. ; Tursini, M. (2002) HTCC based Ku/IF/BB Down Converter for satellite on board processing applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hwang, Do-Kyeong ; Jeong, Si-Gyun ; Kwon, Young-Pil ; Jeong, Yong-Chae ; Kim, Chul-Dong (2002) Harmonic Reduction Amplifier using λ /4 High Impedance Bias Line with Defected Ground Structure (DGS). In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Vellas, N. ; Gaquiere, C. ; Guhel, Y. ; Werquin, M. ; Ducatteau, D. ; Boudart, B. ; de Jaeger, J.C. (2002) High Power Performances of AlGaN/GaN HEMTs On Sapphire Substrate At F=4GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

de Boer, A. ; Hoogland, J.A. ; Suijker, E.M. ; van Wanum, M. ; van Vliet, F.E. (2002) Highly-Integrated X-band Multi-function MMIC with Integrated LNA and Driver Amplifier. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cripps, Steve C. (2002) Ignoring the Obvious: Possibilities for On-chip Linearisation of RFIC Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Joodaki, M. ; Tarraf, A. ; Salih, M. ; Albert, D. ; Schröter-Hohmann, H. ; Scholz, W. ; Kompa, G. ; Hillmer, H. ; Kassing, R. (2002) Improvements of Thermal Resistance and Thermal Stress in Quasi-Monolithic Integration Technology (QMIT) with a New Fabrication Process. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Floriot, D. ; Chartier, E. ; Caillas, N. ; Delage, S. L. ; Jacquet, JC ; Piotrowicz, S. (2002) InGaP Power HBTs : Basic power cells for High Power transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Follmann, R. ; Langgartner, G ; Borkes, J. ; Wolff, I. (2002) Influence of backside metallization on a coplanar X-band LNA. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Ardouin, M. ; Bonte, B. ; Zaknoune, M. ; Théron, D. ; Cordier, Y. ; Bollaert, S. ; De Jaeger, J.C. (2002) Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

van Vliet, F.E. ; van den Bogaart, F.L.M. (2002) Integrated InP circuits and Si TTD for analogue optical beamforming applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Subramaniam, S.C. ; Rezazadeh, A.A (2002) Investigation of He + -ion bombardment in the fabrication of planar InP/ InGaAs HBT structure. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Masuda, Toru ; Landen, Lars ; Zirath, Herbert (2002) Low Power Single-Ended Active Frequency Doubler for a 60 GHz-Band Application. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Borgarino, M. ; Peroni, M. ; Cetronio, A. ; Fantini, F. (2002) Low-Frequency Noise Characterization of AlGaAs/GaAs HBT’s. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Mazzanti, A. ; Verzellesi, G. ; Basile, A.F. ; Canali, C. ; Sozzi, G. ; Menozzi, R. (2002) Measurements and Simulations of Hot-Carrier Degradation Effects in AlGaAs/GaAs HFETs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hartnagel, Hans L. (2002) Millimeter-Wave and Terahertz Devices Based on MEMS Concepts. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Edgar, David L. ; Chen, Yifang ; McEwan, Fiona ; McLelland, Hellen ; Boyd, E. ; Moran, David ; Thoms, Stephen ; Macintyre, Douglas ; Elgaid, K. ; Cao, Xin ; Stanley, Colin ; Thayne, Iain (2002) Millimetre-wave Performance of InAlAs/InGaAs HEMTs using a UVIII/PMMA Bilayer for 70nm T-Gate fabrication. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Toshev, A. ; van der Graaf, M.W. ; de Hek, A.P. ; de Boer, A. ; Arnaudov, A. ; Vineshki, I. ; Kamenopolsky, S. ; Hlebarov, Z. (2002) Mixed Signal High Integration MMIC Phase Control Device for Application in Phased-Arrays. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Maas, Stephen (2002) Mixer Technologies for Modern Microwave and Wireless Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cidronali, A. ; Camprini, M. ; Collodi, G. ; Nair, V. ; Manes, G. ; Lewis, J. ; Goronkin, H. (2002) Modeling and Investigation of Instabilities in Heterojunction Interband Tunnel FET for Microwave Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Santarelli, A. ; Zucchelli, G. ; Bellavista, A. ; Paganelli, R. ; Vannini, G. ; Filicori, F. (2002) Modelling of thermal dispersive effects in electron devices based on an equivalent voltage approach. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cappy, A. ; Stievenard, D. ; Vuillaume, D. (2002) Nanotechnology : the Next Industrial Revolution ? In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Massaro, A. ; Di Donato, A. ; Rozzi, T. (2002) Negative Uniaxial Optical Behaviour of Laminated Polarization Beam-splitters. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Massaro, A. ; Di Donato, A. ; Rozzi, T. (2002) Negative Uniaxial Optical Behaviour of Laminated Polarization Beam-splitters. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Giannini, F. ; Leuzzi, G. ; Orengo, G. ; Colantonio, P. (2002) Neural-Based Large-Signal Device Models Learning First-Order Derivative Parameters for Intermodulation Distortion Prediction. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Zamanillo, J.M. ; Navarro, C. ; Perez-Vega, C. ; Garcia, J.A. ; Mediavilla, A. ; Tazon, A. (2002) New Large Signal Model of AlGaAs P-HEMT and GaAs MESFET Under Optical Illumination. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Drevon, C. ; Monfraix, Philippe ; Paillard, Mathieu ; Schaffauser, Chloé ; Vendier, Olivier ; Cazaux, Jean-Louis (2002) New Trends for Microwave Packaging into Space-Borne Equipment. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Lal, N. ; Nuttinck, S. ; Raghavan, A. ; Gebara, E. ; Venkataraman, S. ; Papapolymerou, J. ; Laskar, J. (2002) Noise, Large-Signal Modeling and Characterization of InP/InGaAs HBTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Gaquière, Christophe ; Ducatteau, D. ; Delemotte, Pascal ; Crosnier, Y. ; Tranchant, Sylvie ; Carnez, B. (2002) Non-linear distortion analysis of Ka BAND MMIC’s under single-tone, TWO-TONE and NPR excitations. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nyberg, P. ; Vanhoja, A. (2002) Novel Variable Attenuator pHEMT MMIC's for Millimetre Wave Radio Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Vandersmissen, R. ; Schreurs, D. ; Vandenberghe, S. ; Borghs, G. (2002) Optical Control of a Backside Illuminated Thin-Film Metamorphic HEMT. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Camarchia, V. ; Bellotti, E. ; Goano, M. ; Kim, S. ; Ghione, G. (2002) Performance evaluation of submicron channel GaN vertical transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Jenkins, William ; Khanifar, Ahmad (2002) Power Amplifier Linearisation Through Generation and Injection of Low-Frequency Second-Order Nonlinear Products. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Lossy, Richard ; Heymann, Peter ; Würfl, Joachim ; Chaturvedi, Nidhi ; Müller, Stefan ; Köhler, Klaus (2002) Power RF-Operation of AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Colantonio, P. ; Giannini, F. ; Leuzzi, G. ; Limiti, E. (2002) Power balance in high efficiency PAs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Aja, B. ; de la Fuente, L. ; Pascual, J.P. ; Cryan, M. ; Artal, E. (2002) Q-Band Monolithic GaAs PHEMT Low Noise Amplifiers: Comparative Study of Depletion and Enhancement Mode Transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Fujii, M. ; Kimura, I. ; Satoh, T. ; Imanaka, K. (2002) RF MEMS Switch with Wafer Level Package Utilizing Frit Glass Bonding. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Pinel, S. ; Lim, K. ; Maeng, M. ; Davis, M.F. ; Li, R. ; Tentzeris, M. ; Laskar, J. (2002) RF System-on-Package (SOP) Development for compact low cost Wireless Front-end systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Rajeev Ojha, John ; Irmer, Sören ; Daleiden, Jürgen ; Hohmann, Heike ; Hillmer, Hartmut (2002) Reactive Ion Etching of InP using Hydrocarbons. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

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Meliga, Marina (2002) Semiconductor laser sources for datacom and telecom applications: recent trends. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

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Hsu, Shawn S.H. ; Valizadeh, Pouya ; Pavlidis, Dimitris ; Moon, Jeong S. ; Micovic, M. ; Wong, Danny ; Hussain, T. (2002) Study on Large-signal Linearity and Efficiency of AlGaN/GaN MODFETs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nuttinck, S. ; Gebara, E. ; Maeng, M. ; Laskar, J. (2002) Temperature-Dependent Analysis and RF-Model of 10Gbps VCSELs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Sommet, R. ; Lopez, D. ; Quéré, R. (2002) Transient Analysis of Collector Current Collapse In Power HBTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bazzi, H. ; Bosse, S. ; Delage, S. L. ; Barelaud, Bruno ; Billonnet, L. ; Jarry, B. (2002) Using HBT BiCMOS differential structures at Microwaves in SiGe technologies. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Reimann, M. ; Ulm, M. ; Buck, T. ; Müller-Fiedler, R. ; Heinrich, W. (2002) Vertical Silicon K-Band CPW Through-Wafer Interconnects. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

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Hwang, Yuh-Jing ; Wang, Huei ; Chu, Tah-Hsiung (2002) W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.