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Number of documents:111.

Kayano, Hiroyuki and Iwata, Satoru and Sato, Hiroaki and Iseki, Yuji (2002) 2.5 GHz Wide Band Linear Amplifier with Feedforward Lineariser on a Board. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Darbandi, A. and Zoyo, M. and Touchais, J.Y. and Lévèque, H. (2002) 25W C-BAND highly efficient on board hybrid amplifier. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Meng, Chin-Chun and Wu, Tzung-Han and Lu, Shey-Shi (2002) 28 dB Gain DC-6 GHz GaInP/GaAs HBT Wideband Amplifiers with and without Emitter Capacitive Peaking. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hoffmann, S. and Ojha, J.R. and Thiede, A. and Leblanc, R. and Wroblewski, B. (2002) 7 VPP Modulator-Driver for 40 Gbit/s Optical Communications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Avitabile, G. and Chellini, B. and Giannini, F. and Limiti, E. (2002) A 18 GHz MMIC biquad active filter. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Virk, R.S. and O'Neal, M. and Camargo, E. and Ragle, R. and Notomi, S. and Gentrup, M. and Franzwa, E. and Hicks, G. and Fukugawara, T. (2002) A 43-Gbps Lithium Niobate Modulator Driver Module. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Miyaguchi, Kenichi and Hieda, Morishige and Tarui, Yukinobu and Hatamoto, Mikio and Kanaya, Koh and Kasahara, Michiaki and Takagi, Tadashi (2002) A 6-18 GHz 5-Bit Phase Shifter MMIC Using Series/Parallel LC Circuit. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Reveyrand, T. and Mazière, C. and Nébus, J. M. and Quéré, R. and Mallet, A. and Lapierre, L. and Sombrin, J. (2002) A Calibrated Time Domain Envelope Measurement System for the Behavioral Modeling of Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bös, Thomas A. and Satoh, Tomio and Kajii, Kiyoshi and Camargo, E. and Hasegawa, Yuichi (2002) A Converter MMIC with Integrated LO Amplifier and Doubler. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Di Paolo, F. and Leuzzi, G. (2002) A Design approach for sub-harmonic generation or suppression in non-linear circuits. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cidronali, A. and Collodi, G. and Toccafondi, C. and Cignani, R. and Santarelli, A. and Vannini, G. and Filicori, F. (2002) A Distributed Approach for the Characterisation of Parasitic Networks in Electron Device Modelling. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Ramachandran, V. and Joseph, A.J. and Johnson, J. B. and Gallagher, M. D. and Brandt, P. O. and Tilly, L. and Greenberg, D.R. and Ansley, W.E. and Gogineni, U. and Harame, D.L. and Dunn, J.S. (2002) A Fully-Manufacturable 0.5mm SiGe BiCMOS Technology for Wireless Power Amplifier Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Giannini, F. and Limiti, E. and Orengo, G. and Serino, A. and De Dominicis, M. (2002) A High Gain-Bandwidth Product Distributed Transimpedance Amplifier IC for High-Speed Optical Transmission Using Low-Cost GaAs Technology. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cidronali, A. and Collodi, G. and Magrini, I. and Manes, G. (2002) A Highly Linear Mixer For Zero-IF Bluetooth Receiver. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Masini, L. and Golfarelli, A. and Pozzoni, M. (2002) A Low Voltage 12-GHz Silicon-Germanium Static frequency divider with a Selectable Division Ratio. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bessemoulin, A. and Quentin, P. and Thomas, H. and Geiger, D. (2002) A Miniaturized 0.5-Watt Q-band 0.25-µm GaAs PHEMT High Power Amplifier MMIC. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Kallfass, Ingmar and Zeuner, Marco and Konig, Ulf and Schumacher, Hermann and Brazil, Thomas J. (2002) A Model for SiGe MODFETs with Improved Large-Signal Quality and Frequency Range. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Siligaris, Alexandre and Vanmackelberg, Matthieu and Dambrine, G. and Vellas, Nicolas and Danneville, F. (2002) A New Empirical Non-linear Model for SOI MOSFET. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Centurelli, F. and Di Martino, A. and Marietti, P. and Scotti, G. and Tommasino, P. and Trifiletti, A. (2002) A Non-Linear Statistical Model for GaAs FET Integrated Circuits. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Vorobiev, A. and Deleniv, A. and Talanov, V. and Gevorgian, S. (2002) A Simple Parallel-Plate Resonator Technique for Microwave. Characterization of Thin Resistive Films. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Condon, Emer and Brazil, Thomas J. (2002) A Simplified Non-Linear Physical Model for High Frequency FET’s. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Comparini, M. and Di Pasquale, Andrea and Feudale, Marziale and Giorgio, Agostino and Perri, Anna Gina (2002) A Technique to Design MMICs for Space Applications and High Production Yields. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Kwaspen, J.J.M. (2002) A Universal Test Set for DC and Pulsed I-V Characterization of Various Semiconductor Devices. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Buoli, Carlo and Gadaleta, Vito Marco and Turillo, Tommaso and Zingirian, Alessandro (2002) A broadband microstrip to waveguide transition for FR4 multilayer PCBs up to 50 GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Paganelli, R. and Santarelli, A. and Zucchelli, G. and Costantini, A. and Vannini, G. and Filicori, F. (2002) A computationally efficient approach for the design of RF power amplifiers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cappelluti, F. and Bertazzi, F. and Ghione, G. (2002) A novel finite-difference time-domain approach to the self-consistent simulation of high-speed TW-EAMs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Jastrzebski, Adam K. (2002) A simple condition for maximum bandwidth of a chip packaged in an mm-wave waveguide. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Martín-Guerrero, T.M. and Esteban-Marzo, J. and Castillo-Vázquez, B. and Camacho-Peñalosa, C. (2002) A single relaxation-time non-quasi-static model for monolithic MESFET devices. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cortese, P. and Camiade, M. and Domnesque, D. (2002) A tiny and fully integrated differential VCO for LMDS application. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Schreurs, D. and Vandenberghe, S. and Taher, H. and Nauwelaers, B. (2002) ANN Model For SiGe HBTs Constructed From Time-Domain Large-Signal Measurements. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Joodaki, M. and Kompa, G. and Hillmer, H. and Kassing, R. (2002) Advantages of the New Generation Quasi-Monolithic Integration Technology (QMIT). In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Song, Young-Jean and Oh, In-Ju and Seo, Kyu-Jae and Jeong, Yong-Chae and Kim, Chul-Dong (2002) Analog Controlled Adaptive Feedforward Amplifier for IMT-2000 Band. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Mitani, Y. and Kasai, D. and Horio, K. (2002) Analysis of Correlation between Breakdown Characteristics and Gate-Lag Phenomena in Narrowly-Recessed-Gate. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Dubuc, Nicolas and Duvanaud, Claude and Bouysse, Ph. (2002) Analysis of the Doherty technique and application to a 900MHz power amplifier. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Reedy, Ronald E. (2002) Application of UTSi® CMOS On Sapphire to RF and Mixed Signal Requirements in Advanced Space Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Abdulrahman, B. and Baudoin, G. (2002) Applying Digital Predistortion To Power Amplifiers Used in Third Generation Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Acciari, G. and Giannini, F. and Limiti, E. and Rossi, M. (2002) Baseband Predistortion Lineariser Using Direct Spline Computation. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Duême, Ph. and Dequen, Th. and Funck, R. and Caillon, B. and Guerbeur, G. (2002) Broadband Active Phase Shifter GaAs MMIC. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Andersson, Kristoffer and Eriksson, Joakim and Rorsman, Niklas and Zirath, Herbert (2002) C-Band Resistive SiC-MESFET mixer. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Pagani, M. and Argento, D. and Bignamini, M. and De Francesco, I. and Frave, G. and Meazza, A. and Mornata, A, and Palomba, F. (2002) Characterisation of PHEMT intermodulation behaviour for highly linear MMIC power amplifier design. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Ono, Naoko and Sasaki, Fumio and Arai, Kazuhiro and Iseki, Yuji (2002) Characteristics of GaAs HEMTs with Flip-Chip Interconnections. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hu, Juntao and Sun, Mike and Ho, Wu-Jing and Qin, Yue and Li, Jiang and Day, Ding (2002) Characterization and Modeling of InP DHBTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cignani, R. and Costantini, A. and Vannini, G. and Filicori, F. and Manfredi, L. (2002) Circuit Architectures for Low-Phase-Noise Oscillators. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nightingale, S.J. and Philippakis, M. and Lovis, M. (2002) Considerations in the Design of Electro-Optic Modulators and Drivers for 40 Gb/s and Beyond. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Schwörer, C. and Tessmann, A. and Leich, M. and Leuther, A. and Kudszus, S. and Bessemoulin, A. and Schlechtweg, M. (2002) Coplanar High Performance MMICs in MHEMT and PHEMT Technology for Applications up to 100 GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Centurelli, F. and Luzzi, R. and Scotti, G. and Tommasino, P. and Trifiletti, A. (2002) Design Centering and Yield Optimisation of MMIC’s with Off-Chip Digital Controllers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Giorgio, Agostino and Perri, Anna Gina (2002) Design of Photonic Band-Gap Devices Using the Leaky Mode Propagation Method. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Camargo, E. and Virk, R.S. and Hajji, R. and Parker, S. and Ohnishi, H. (2002) Design of a Broadband Amplifier for High Speed Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Maya, M.C. and Lazaro, A. and Pradell, L. (2002) Determination of FET noise parameters from 50 Ω noise figure measurements using a distributed noise model. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Myslinski, M. and Schreurs, D. and Wiatr, W. (2002) Development and Verification of a Non-Linear Look-Up Table Model for RF Silicon BJTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Sugiyama, Hiroki and Yokoyama, Haruki and Watanabe, Kazuo and Kobayashi, Takashi (2002) Diffusion behavior of delta-doped Si in InAlAs/InP heterostructures. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Meng, C. C. and Peng, A. S. and Wen, S. Y. and Huang, G. W. (2002) Direct observation of Gain compression mechanisms in PHEMT by RF Gate and Drain Currents. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

van Wanum, M. and van der Graaf, M.W. and Hoogland, J.A.H. and van Heijningen, M. (2002) Dual Transimpedance Amplifier for 43 Gbps applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cappelluti, F. and Bonani, F. and Donati Guerrieri, S. and Ghione, G. and Naldi, C.U. and Pirola, M. (2002) Dynamic, self consistent electro-thermal simulation of power microwave devices including the effect of surface metallizations. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Wane, S. and Bajon, D. and Baudrand, H. and Gamand, P. (2002) EM Analysis of Inhomogeneous Layers Stack from the Wave Concept. Reduction of Substrate Couplings in BiCMOS Technology. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Lutz, C.R. and Deluca, P.M. and Stevens, K.S. and Landini, B.E. and Welser, R.E. and Welty, R.J. and Asbeck, P.M. (2002) Enhancing the Device Performance of III-V Based Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Malbert, N. and Labat, N. and Lambert, B. and Touboul, A. and Pataut, G. (2002) Evidence of surface trap effects on pseudomorphic HEMT submitted to impact ionisation stresses. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Massiot, Michel (2002) Evolution of LTCC technology for industrial applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Saglam, M. and Leo, E. and Bozzi, M. and Perregrini, L. and Rodriguez-Gironés, M. and Hartnagel, H.L. (2002) Fabrication, Testing, and Lumped Element Modeling of Planar Heterostructure Barrier Varactors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Manfrin, S.K. and De Dominicis, M. and Orengo, G. and Giannini, F. and Romero, M.A. (2002) Fast Tuning Electronically Switched 16 x 1 Channel Receiver For Packet-Switched WDM Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nuttinck, S. and Pinel, S. and Gebara, E. and Laskar, J. and Harris, M. and Shealy, J.R. (2002) Floating-Body Effects in AlGaN/GaN Power HFETs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Singhal, S. and Brown, J.D. and Borges, R. and Piner, E. and Nagy, W. and Vescan, A. (2002) Gallium Nitride on Silicon HEMTs for Wireless Infrastructure Applications, Thermal Design and Performance. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bollaert, S. and Parenty, T. and Wallart, X. and Happy, H. and Dambrine, G. and Cappy, A. (2002) HEMT's Design for Applications beyond 100GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Comparini, M.C. and Leone, C. and Montanucci, P. and Tursini, M. (2002) HTCC based Ku/IF/BB Down Converter for satellite on board processing applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hwang, Do-Kyeong and Jeong, Si-Gyun and Kwon, Young-Pil and Jeong, Yong-Chae and Kim, Chul-Dong (2002) Harmonic Reduction Amplifier using λ /4 High Impedance Bias Line with Defected Ground Structure (DGS). In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Vellas, N. and Gaquiere, C. and Guhel, Y. and Werquin, M. and Ducatteau, D. and Boudart, B. and de Jaeger, J.C. (2002) High Power Performances of AlGaN/GaN HEMTs On Sapphire Substrate At F=4GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

de Boer, A. and Hoogland, J.A. and Suijker, E.M. and van Wanum, M. and van Vliet, F.E. (2002) Highly-Integrated X-band Multi-function MMIC with Integrated LNA and Driver Amplifier. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cripps, Steve C. (2002) Ignoring the Obvious: Possibilities for On-chip Linearisation of RFIC Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Joodaki, M. and Tarraf, A. and Salih, M. and Albert, D. and Schröter-Hohmann, H. and Scholz, W. and Kompa, G. and Hillmer, H. and Kassing, R. (2002) Improvements of Thermal Resistance and Thermal Stress in Quasi-Monolithic Integration Technology (QMIT) with a New Fabrication Process. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Floriot, D. and Chartier, E. and Caillas, N. and Delage, S. L. and Jacquet, JC and Piotrowicz, S. (2002) InGaP Power HBTs : Basic power cells for High Power transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Follmann, R. and Langgartner, G and Borkes, J. and Wolff, I. (2002) Influence of backside metallization on a coplanar X-band LNA. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Ardouin, M. and Bonte, B. and Zaknoune, M. and Théron, D. and Cordier, Y. and Bollaert, S. and De Jaeger, J.C. (2002) Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

van Vliet, F.E. and van den Bogaart, F.L.M. (2002) Integrated InP circuits and Si TTD for analogue optical beamforming applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Subramaniam, S.C. and Rezazadeh, A.A (2002) Investigation of He + -ion bombardment in the fabrication of planar InP/ InGaAs HBT structure. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Masuda, Toru and Landen, Lars and Zirath, Herbert (2002) Low Power Single-Ended Active Frequency Doubler for a 60 GHz-Band Application. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Borgarino, M. and Peroni, M. and Cetronio, A. and Fantini, F. (2002) Low-Frequency Noise Characterization of AlGaAs/GaAs HBT’s. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Mazzanti, A. and Verzellesi, G. and Basile, A.F. and Canali, C. and Sozzi, G. and Menozzi, R. (2002) Measurements and Simulations of Hot-Carrier Degradation Effects in AlGaAs/GaAs HFETs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hartnagel, Hans L. (2002) Millimeter-Wave and Terahertz Devices Based on MEMS Concepts. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Edgar, David L. and Chen, Yifang and McEwan, Fiona and McLelland, Hellen and Boyd, E. and Moran, David and Thoms, Stephen and Macintyre, Douglas and Elgaid, K. and Cao, Xin and Stanley, Colin and Thayne, Iain (2002) Millimetre-wave Performance of InAlAs/InGaAs HEMTs using a UVIII/PMMA Bilayer for 70nm T-Gate fabrication. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Toshev, A. and van der Graaf, M.W. and de Hek, A.P. and de Boer, A. and Arnaudov, A. and Vineshki, I. and Kamenopolsky, S. and Hlebarov, Z. (2002) Mixed Signal High Integration MMIC Phase Control Device for Application in Phased-Arrays. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Maas, Stephen (2002) Mixer Technologies for Modern Microwave and Wireless Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cidronali, A. and Camprini, M. and Collodi, G. and Nair, V. and Manes, G. and Lewis, J. and Goronkin, H. (2002) Modeling and Investigation of Instabilities in Heterojunction Interband Tunnel FET for Microwave Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Santarelli, A. and Zucchelli, G. and Bellavista, A. and Paganelli, R. and Vannini, G. and Filicori, F. (2002) Modelling of thermal dispersive effects in electron devices based on an equivalent voltage approach. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Cappy, A. and Stievenard, D. and Vuillaume, D. (2002) Nanotechnology : the Next Industrial Revolution ? In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Massaro, A. and Di Donato, A. and Rozzi, T. (2002) Negative Uniaxial Optical Behaviour of Laminated Polarization Beam-splitters. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Massaro, A. and Di Donato, A. and Rozzi, T. (2002) Negative Uniaxial Optical Behaviour of Laminated Polarization Beam-splitters. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Giannini, F. and Leuzzi, G. and Orengo, G. and Colantonio, P. (2002) Neural-Based Large-Signal Device Models Learning First-Order Derivative Parameters for Intermodulation Distortion Prediction. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Zamanillo, J.M. and Navarro, C. and Perez-Vega, C. and Garcia, J.A. and Mediavilla, A. and Tazon, A. (2002) New Large Signal Model of AlGaAs P-HEMT and GaAs MESFET Under Optical Illumination. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Drevon, C. and Monfraix, Philippe and Paillard, Mathieu and Schaffauser, Chloé and Vendier, Olivier and Cazaux, Jean-Louis (2002) New Trends for Microwave Packaging into Space-Borne Equipment. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Lal, N. and Nuttinck, S. and Raghavan, A. and Gebara, E. and Venkataraman, S. and Papapolymerou, J. and Laskar, J. (2002) Noise, Large-Signal Modeling and Characterization of InP/InGaAs HBTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Gaquière, Christophe and Ducatteau, D. and Delemotte, Pascal and Crosnier, Y. and Tranchant, Sylvie and Carnez, B. (2002) Non-linear distortion analysis of Ka BAND MMIC’s under single-tone, TWO-TONE and NPR excitations. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nyberg, P. and Vanhoja, A. (2002) Novel Variable Attenuator pHEMT MMIC's for Millimetre Wave Radio Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Vandersmissen, R. and Schreurs, D. and Vandenberghe, S. and Borghs, G. (2002) Optical Control of a Backside Illuminated Thin-Film Metamorphic HEMT. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Camarchia, V. and Bellotti, E. and Goano, M. and Kim, S. and Ghione, G. (2002) Performance evaluation of submicron channel GaN vertical transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Jenkins, William and Khanifar, Ahmad (2002) Power Amplifier Linearisation Through Generation and Injection of Low-Frequency Second-Order Nonlinear Products. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Lossy, Richard and Heymann, Peter and Würfl, Joachim and Chaturvedi, Nidhi and Müller, Stefan and Köhler, Klaus (2002) Power RF-Operation of AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Colantonio, P. and Giannini, F. and Leuzzi, G. and Limiti, E. (2002) Power balance in high efficiency PAs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Aja, B. and de la Fuente, L. and Pascual, J.P. and Cryan, M. and Artal, E. (2002) Q-Band Monolithic GaAs PHEMT Low Noise Amplifiers: Comparative Study of Depletion and Enhancement Mode Transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Fujii, M. and Kimura, I. and Satoh, T. and Imanaka, K. (2002) RF MEMS Switch with Wafer Level Package Utilizing Frit Glass Bonding. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Pinel, S. and Lim, K. and Maeng, M. and Davis, M.F. and Li, R. and Tentzeris, M. and Laskar, J. (2002) RF System-on-Package (SOP) Development for compact low cost Wireless Front-end systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Rajeev Ojha, John and Irmer, Sören and Daleiden, Jürgen and Hohmann, Heike and Hillmer, Hartmut (2002) Reactive Ion Etching of InP using Hydrocarbons. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Suh, Y.S. and Han, K.-Y. and Ahn, C.-H. and Heo, D. (2002) Scalable Large Signal Modeling of InGaP/GaAs HBT for CAD Tools. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Meliga, Marina (2002) Semiconductor laser sources for datacom and telecom applications: recent trends. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Lee, C. S. and Chang, E. Y. and Biswas, D. and Chang, Li and Huang, J. S. (2002) Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Diodes on n-GaN. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Hsu, Shawn S.H. and Valizadeh, Pouya and Pavlidis, Dimitris and Moon, Jeong S. and Micovic, M. and Wong, Danny and Hussain, T. (2002) Study on Large-signal Linearity and Efficiency of AlGaN/GaN MODFETs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Nuttinck, S. and Gebara, E. and Maeng, M. and Laskar, J. (2002) Temperature-Dependent Analysis and RF-Model of 10Gbps VCSELs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Sommet, R. and Lopez, D. and Quéré, R. (2002) Transient Analysis of Collector Current Collapse In Power HBTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Bazzi, H. and Bosse, S. and Delage, S. L. and Barelaud, Bruno and Billonnet, L. and Jarry, B. (2002) Using HBT BiCMOS differential structures at Microwaves in SiGe technologies. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Reimann, M. and Ulm, M. and Buck, T. and Müller-Fiedler, R. and Heinrich, W. (2002) Vertical Silicon K-Band CPW Through-Wafer Interconnects. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

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Hwang, Yuh-Jing and Wang, Huei and Chu, Tah-Hsiung (2002) W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

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